
Allicdata Part #: | 1086-21050-ND |
Manufacturer Part#: |
JANTXV2N5415S |
Price: | $ 13.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 200V 1A TO39 |
More Detail: | Bipolar (BJT) Transistor PNP 200V 1A 750mW Throug... |
DataSheet: | ![]() |
Quantity: | 1000 |
102 +: | $ 12.13180 |
Series: | Military, MIL-PRF-19500/485 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 750mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 (TO-205AD) |
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Transistors are used in a variety of applications, including logic and power amplifying circuits. While typically used to amplify DC signals, they can also be used to convert AC signals into DC. The JANTXV2N5415S is an example of a type of transistor called a bipolar junction transistor, commonly abbreviated to BJT. This type of transistor is able to switch between an On or Off state and is used primarily in applications such as amplifying circuits.
The JANTXV2N5415S is a single transistor meaning it has a single base, collector and emitter. It has a maximum power dissipation rating of 1 watt, a maximum collector-emitter voltage rating of 30 volts, a maximum emitter-base voltage rating of 5 volts, maximum collector current rating of 500 mA, and a maximum frequency of 200 MHz. These ratings indicate the types of applications and voltages the device can handle, while the maximum frequency rating can be used to determine how quickly the device can switch between On and Off states.
The JANTXV2N5415S can be used in applications such as amplifying low voltage signals or as an output transistor in switching power supplies. As an amplifier, it can be used to boost weak signals from sensors or items such as cell phones to an appropriate level for further processing. The transistor can also be used in a switching power supply as the output transistor to control the voltage from the power supply.
The working principle of the JANTXV2N5415S is relatively simple. It uses a base-emitter junction to form a current path when enough voltage is applied to it. This base-emitter junction is formed by a barrier layer made of semiconductor material, allowing current to flow between the emitter and collector while blocking the current from the base to the collector. When the voltage at the base is low, the transistor is “Off”, while when the voltage at the base rises to a certain level, the transistor is considered to be “On”, allowing current to pass through it.
This is the basis of how the transistor works, which can be used to amplify a signal. When the voltage at the base is low, the voltage at the collector-emitter junction is also low, meaning little or no current is flowing through the transistor. When the voltage at the base rises to a certain level, the voltage at the collector-emitter is also increased by a proportionate amount. This amplification of the voltage is the main function of the JANTXV2N5415S.
In summary, the JANTXV2N5415S is a single bipolar junction transistor that can be used in various applications such as amplifying low-voltage signals or as an output transistor in a switching power supply. Its working principle is based on the base-emitter junction, which allows current to pass when a certain voltage level is applied. The transistor is “On” when the voltage at the base rises and “Off” when the voltage at the base is low, and this amplification of the voltage is used to amplify signals.
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