JANTXV2N5416U4 Allicdata Electronics
Allicdata Part #:

1086-16150-ND

Manufacturer Part#:

JANTXV2N5416U4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 300V 1A
More Detail: Bipolar (BJT) Transistor PNP 300V 1A 1W Surface M...
DataSheet: JANTXV2N5416U4 datasheetJANTXV2N5416U4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/485
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4
Description

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The JANTXV2N5416U4 is a type of single bipolar junction transistors (BJT). They are semiconductor devices that have three electrodes—the base, the collector and the emitter. These transistors are widely used in amplifying, switching and digital logic applications. Understanding how they operate and their application field is the key to understanding their use and application.

Features

The JANTXV2N5416U4 is well-suited for high-speed switching applications. Some of its features are:

  • Low Collector to Emitter Saturation Voltage
  • High Transition Frequency
  • Built-in Base and Emitter Resistors
  • High Power Displacement Capacity
  • High Output Voltage Swing
  • Low Power Consumption
  • High Gain Bandwidth Product

Applications

The JANTXV2N5416U4 is typically used in high-speed switching applications such as motor control, data acquisition, audio amplifiers and video amplifiers. They are also used in applications for logic level means that the switching can work in logic levels (1V, 0V) instead of the classic higher voltages of 4 to 6V.

Working Principle

The JANTXV2N5416U4 transistor works in a similar way to those basic chemistry experiments we did in high school. When you recall those experiments, you\'ll remember that when you combine two chemicals in the correct proportion, you get a third product. This is exactly how a Bipolar Junction Transistor (BJT) works.

In the JANTXV2N5416U4, there are three regions or junctions: the base, the collector and the emitter. Depending on the application and the circuit layout, these electrolytes act as current and voltage sources. When a voltage is applied at the base, current will flow from the base and into the collector. At this point the base and collector constitute an NPN transistor, meaning current is flowing from collector to emitter. This allows for the voltage of the collector to be controlled by the voltage across the base.

The BJT also functions as an amplifier as it is capable of raising or amplifying the input signal at the base. This is done by configuring the transistor as an emitter-follower amplifier. This configuration can effectively increase the gain of a signal travelling through the transistor.

In summary, the JANTXV2N5416U4 is a PNP type of Bipolar Junction Transistor (BJT) that is suitable for high-speed switching applications. Its working principle comprises of three regions – the base, emitter and collector. By configuring it as an emitter-follower amplifier, it is able to amplify the input signal. Some of its features include low collector to emitter saturation voltage, high transition frequency, built-in base and emitter resistors, high power displacement capacity, high output voltage swing and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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