Allicdata Part #: | 1086-16150-ND |
Manufacturer Part#: |
JANTXV2N5416U4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 300V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 300V 1A 1W Surface M... |
DataSheet: | JANTXV2N5416U4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/485 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | U4 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JANTXV2N5416U4 is a type of single bipolar junction transistors (BJT). They are semiconductor devices that have three electrodes—the base, the collector and the emitter. These transistors are widely used in amplifying, switching and digital logic applications. Understanding how they operate and their application field is the key to understanding their use and application.
Features
The JANTXV2N5416U4 is well-suited for high-speed switching applications. Some of its features are:
- Low Collector to Emitter Saturation Voltage
- High Transition Frequency
- Built-in Base and Emitter Resistors
- High Power Displacement Capacity
- High Output Voltage Swing
- Low Power Consumption
- High Gain Bandwidth Product
Applications
The JANTXV2N5416U4 is typically used in high-speed switching applications such as motor control, data acquisition, audio amplifiers and video amplifiers. They are also used in applications for logic level means that the switching can work in logic levels (1V, 0V) instead of the classic higher voltages of 4 to 6V.
Working Principle
The JANTXV2N5416U4 transistor works in a similar way to those basic chemistry experiments we did in high school. When you recall those experiments, you\'ll remember that when you combine two chemicals in the correct proportion, you get a third product. This is exactly how a Bipolar Junction Transistor (BJT) works.
In the JANTXV2N5416U4, there are three regions or junctions: the base, the collector and the emitter. Depending on the application and the circuit layout, these electrolytes act as current and voltage sources. When a voltage is applied at the base, current will flow from the base and into the collector. At this point the base and collector constitute an NPN transistor, meaning current is flowing from collector to emitter. This allows for the voltage of the collector to be controlled by the voltage across the base.
The BJT also functions as an amplifier as it is capable of raising or amplifying the input signal at the base. This is done by configuring the transistor as an emitter-follower amplifier. This configuration can effectively increase the gain of a signal travelling through the transistor.
In summary, the JANTXV2N5416U4 is a PNP type of Bipolar Junction Transistor (BJT) that is suitable for high-speed switching applications. Its working principle comprises of three regions – the base, emitter and collector. By configuring it as an emitter-follower amplifier, it is able to amplify the input signal. Some of its features include low collector to emitter saturation voltage, high transition frequency, built-in base and emitter resistors, high power displacement capacity, high output voltage swing and low power consumption.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
JANTXV1N6141A | Microsemi Co... | 38.35 $ | 1000 | TVS DIODE 6.9V 13.4V C AX... |
JANTX1N6103A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.2V AXIA... |
JANTX1N6103US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.76V B S... |
JANTX1N6104 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.71V AXI... |
JANTX1N6104A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V AXIA... |
JANTX1N6104AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V B SQ... |
JANTX1N6105 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V AXI... |
JANTX1N6105AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 13.4V B SQ... |
JANTX1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JANTX1N6106 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 15.23V AXI... |
JANTX1N6106AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 14.5V B SQ... |
JANTX1N6107 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JANTX1N6107A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JANTX1N6107AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V B SQ... |
JANTX1N6107US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V B S... |
JANTX1N6108 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
JANTX1N6108A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V AXIA... |
JANTX1N6108AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V B SQ... |
JANTX1N6108US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V B S... |
JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...