JANTXV2N6249T1 Allicdata Electronics
Allicdata Part #:

1086-16185-ND

Manufacturer Part#:

JANTXV2N6249T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 200V 10A TO-3
More Detail: Bipolar (BJT) Transistor NPN 200V 10A 6W Through ...
DataSheet: JANTXV2N6249T1 datasheetJANTXV2N6249T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/510
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Power - Max: 6W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Description

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The JANTXV2N6249T1 is a high performance, low power voltage controlled N-channel junction field effect transistor (JFET), which is classified in the Transistors - Bipolar (BJT) - Single category. It is a normally-on type of JFET, which means it is typically conducting at maximum drain current when the gate-to-source voltage is zero. The JANTXV2N6249T1 is a popular choice for engineers due to its excellent performance, low power dissipation and its rugged construction.

The JANTXV2N6249T1 is ideal for applications that require reliable, low-power switching of large currents over a wide range of voltages. It is used in a variety of applications such as in power supplies, audio amplifiers, automotive systems, robotic projects, medical electronics and many other areas. Examples of the kinds of devices it will typically be used to drive include motors, relays, solenoids, valves and other electronically controlled items.

The operating principle of the JANTXV2N6249T1 is based on its three-terminal structure and the electric field effect of its conducting channel. When a gate-to-source voltage is applied to the device, the potential between the gate and the channel surface changes. This electric field effect modulates the charge carriers within the channel, which in turn controls the current flow in the conducting channel known as a drain current. In addition, the JANTXV2N6249T1 also features an increased stability level compared to other types of JFETs, allowing it to be used in temperature-sensitive applications.

The JANTXV2N6249T1 can be purchased in several forms, including through-hole and surface-mount. All varieties offer low power consumption and high input impedance, making them suitable for a wide range of applications. When choosing the right device for an application, engineers should take into account the operating conditions and the maximum gate-to-source voltage to ensure the device\'s maximum ratings are not exceeded.

Due to its ability to handle extremely low gate-to-source voltages, excellent stability, and its low power consumption, the JANTXV2N6249T1 is a popular choice for many types of applications. Its versatility and reliable performance make it a great choice for designing projects in the fields of power supplies, automotive systems, audio amplifiers, and robotics.

The specific data is subject to PDF, and the above content is for reference

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