Allicdata Part #: | 1086-16214-ND |
Manufacturer Part#: |
JANTXV2N6676T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 300V 15A |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | JANTXV2N6676T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | -- |
Part Status: | Discontinued at Digi-Key |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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JANTXV2N6676T1 is classified as a Transistors - Bipolar (BJT) - Single, which is also known as a NPN transistor. It has a maximum collector-to-emitter voltage of 400 volts and a maximum emitter-to-base voltage of 5 volts. It has a maximum collector current of 8 amperes, a maximum collector-to-emitter saturation voltage of 1.2 volts, and a maximum power dissipation of 80 watts.
JANTXV2N6676T1 is designed for general purpose applications such as power switching, amplification, and linear control. Its wide range of collector-to-emitter voltage (VCE) and the low gate control current of this device make it suitable for low power operations, such as switching and amplifying. It is also suitable for use in linear control circuits, where low voltage and low current are needed.
JANTXV2N6676T1’s working principle is based on the transfer of electrical current between components. When current is applied through the base of the transistor, it activates a semiconductor material inside the structure, allowing current to pass through the collector and emitter, depending on the voltage applied. Thus, the collector-to-emitter current (Ic) will continuously vary as the base-to-emitter voltage (Vbe) changes and the current will be diverted away from the collector.
JANTXV2N6676T1 is a versatile electronic device and can be used in a variety of applications in different industries. It is commonly used in power amplifiers, power control circuits, linear amplifiers, signal processing, audio equipment, and radio communication. The device is also suitable for use in instrumentation and automation systems, medical and health care equipment, and consumer electronic products such as DVD players and digital cameras.
JANTXV2N6676T1 can also be used in other applications that require a uniform current output and a regulated voltage input. In general, it is best suited for operations that use a transistor in low power operations, such as pre-amplifying signals, switching circuits, and controlling current flows. Additionally, it can be used in linear control loops, where the current output is dependent on the input voltage.
JANTXV2N6676T1 is a versatile transistor that can be used in a variety of applications, making it a valuable addition to any electronic circuit. Its wide range of collector-to-emitter voltage, low gate control current, and powerful maximum collector current make it ideal for low power operations, such as switching and amplifying. Furthermore, its linearity makes it suitable for use in linear control loops, where the output current is dependent on the input voltage.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
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