JDP2S02AFS(TPL3) Discrete Semiconductor Products |
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Allicdata Part #: | JDP2S02AFS(TPL3)TR-ND |
Manufacturer Part#: |
JDP2S02AFS(TPL3) |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE PIN 30V 50MA FSC |
More Detail: | RF Diode PIN - Single 30V 50mA fSC |
DataSheet: | JDP2S02AFS(TPL3) Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.04445 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.4pF @ 1V, 1MHz |
Resistance @ If, F: | 1.5 Ohm @ 10mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | fSC |
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Diodes are often used in radio frequency (RF) operational amplifiers in order to help regulate signal gain, signal leakage, and signal inertance. The JDP2S02AFS(TPL3) diode is specifically designed with this in mind, and it can provide an effective solution to a variety of these problems. This article will explain the JDP2S02AFS(TPL3) diodes’ application field and working principle.
JDP2S02AFS(TPL3) diodes can be used in a variety of applications, but most commonly they are used in RF operational amplifiers. Operational amplifiers are circuits that allow for signal amplification, or the multiplying of a signal’s amplitude, outside the normal range of the circuit. The JDP2S02AFS(TPL3) diode is specifically designed to control the current through the amplifier in order to achieve a desired gain level. This allows the amplifier to regulate its own operating range, since the current can be varied in order to increase or decrease the gain of the signal.
The JDP2S02AFS(TPL3) diode works on the principle of rectification. Rectification is a process by which alternating current is transformed into either direct current or pulsed current. It works by using a diode in order to allow one type of current to pass while blocking the other type. When utilized in RF amplifiers, the JDP2S02AFS(TPL3) diode restricts the current passing through the amplifier in either direction, allowing for a higher gain in one direction and a lower gain in the other.
In addition to regulating gain, the JDP2S02AFS(TPL3) diode can also be used to reduce signal leakage and signal inertance. Signal leakage occurs when RF signals pass through parts of the circuit other than what they were intended to pass through, resulting in unwanted noise in the circuit. Signal inertance is a type of distortion in which an amplifier’s gain drops suddenly and unexpectedly. The JDP2S02AFS(TPL3) diode can effectively reduce both of these signals, allowing for a more efficient amplifier.
The JDP2S02AFS(TPL3) diode is designed to work with transistors and integrated circuits, allowing it to be used in a variety of circuits and applications. Because of its ability to regulate gain, reduce signal leakage and signal inertance, and integrate with many circuits, the JDP2S02AFS(TPL3) diode is an effective solution for many RF amplifier applications.
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