Allicdata Part #: | JFTJ105-ND |
Manufacturer Part#: |
JFTJ105 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 1W SOT223 |
More Detail: | JFET N-Channel 25V 1W Surface Mount SOT-223-4 |
DataSheet: | JFTJ105 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 500mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 4.5V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 3 Ohms |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223-4 |
Description
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JFTJ105 is a junction field-effect transistor (JFET) manufactured by Toshiba. It is a depletion-mode device that controls current between source and drain terminals by varying the channel resistance. It features a low noise level and high input impedance. The JFTJ105 is typically used in low-noise and low-power circuits, such as preamplifiers, audio equipment, and power supplies.
Features and Benefits
The JFTJ105 provides numerous benefits and features, including:- High input impedance – typically greater than 8MΩ
- Low drain-source leakage current – typically less than 250μA
- Low noise – typically 0.5dB or lower
- Wide frequency range – 4MHz to 4GHz
- Fast switching speed – typically 1nsec
- Low power consumption – typically less than 0.1mW
Application Fields
The JFTJ105 can be used in a wide variety of applications, including:- Low-noise preamplifier circuits
- Audio power amplifiers
- Voltage amplifiers
- Switch mode power supplies
- Electronic volume control circuits
- Signal conditioning circuits
- RF amplifiers
- High-speed switching circuits
Working Principle
The JFTJ105 works on the principle of controlling current between the drain and source terminals. It achieves this through a voltage-controlled gate which forms the channel, which is an area of resistance. Varying the voltage applied to the gate will alter the channel resistance, thereby changing the current that flows through it. This makes the JFTJ105 ideal for use in low-noise and low-power circuits.
Conclusion
In conclusion, the JFTJ105 is a high-performance junction field-effect transistor (JFET) manufactured by Toshiba. It is typically used in low-noise and low-power circuits, such as preamplifiers, audio equipment, and power supplies. It offers high input impedance, low drain-source leakage current, low noise levels, wide frequency range, fast switching speed, and low power consumption.The specific data is subject to PDF, and the above content is for reference
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JFTJ105 | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 25V 1W SOT223JF... |
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