Allicdata Part #: | JTDB25-ND |
Manufacturer Part#: |
JTDB25 |
Price: | $ 218.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANSISTOR BIPO 55AW-1 |
More Detail: | RF Transistor NPN 55V 5A 960MHz ~ 1.215GHz 97W Cha... |
DataSheet: | JTDB25 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 198.26400 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 55V |
Frequency - Transition: | 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 7.5dB |
Power - Max: | 97W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 500mA, 5V |
Current - Collector (Ic) (Max): | 5A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55AW-1 |
Supplier Device Package: | 55AW-1 |
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Introduction:
JTDB25 is a type of bipolar junction transistor (BJT) designed for radio frequency (RF) applications. It is a three-terminal active device composed of one emitter, one base, and one collector.
Application Field:
JTDB25 can be used in various RF circuits and systems, including amplifiers, oscillators, and signal processors. It is commonly found in high-frequency military and commercial radio systems, as well as in television transmitters and receivers. In radio systems, the device can be used as a linear amplifier, a mixer, or a signal source.
JTDB25 is particularly popular in equipment that requires higher RF linearity, such as base station amplifiers and satellite communication systems. Additionally, its large voltage gain, current gain, and power gain make it suitable for circuits that require higher efficiency and power output. The device has also been used in amateur radio applications for amateur televisions (ATV) receivers and transmitters.
Working Principle:
JTDB25 operates using the principle of the bipolar junction transistor, which is composed of two p-type materials and one n-type material. When biased, electrons from the emitter flow to the base, where they are amplified and passed through to the collector. The current gain or amplification of the device is determined by the ratio of the electrons that reach the collector to those that are emitted from the emitter.
Additionally, when the emitter evinces a negative charge and the base a positive charge, a depletion region forms in the space between them. This depletion region reduces the conductivity of the transistor and affects the effectiveness of its operation. As a result, matching the proper bias to the device is essential for optimal performance.
Conclusion:
JTDB25 is a bipolar junction transistor (BJT) specially designed for radio frequency (RF) applications. It is most commonly used in high-frequency military and commercial radio systems, amateur radio operations, and television transmitters and receivers. The device operates by utilising the principle of a bipolar junction transistor and its current gain is determined by the electron flow from the emitter to the collector. Additionally, the emitter-base junction must be properly biased in order to achieve optimal performance.
The specific data is subject to PDF, and the above content is for reference
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