JTDB75

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JTDB75 transistors are special-treated NPN silicon transistors designed for use in a wide range of radio-frequency applications. As a low-noise device, the JTDB75 is particularly suited for use in sensitive communication circuits such as radar, cellular telephones or satellite receivers. Its low-noise operation, alongside its wide current range, low operating and collector-emitter saturation voltages, and relatively low collector-emitter leakage, makes it well-suited for a variety of circuit implementations.

This device is available in a TO-18 metal-can package, with a collector-emitter voltage rating of 75V and power dissipation of 200mW. It is constructed of three terminals connected to a single NPN-active region as shown in figure 1. The base/emitter junction is an epitaxial PN junction while the collector-base junction is a diffused-base type.

The working principle of the JTDB75 is based upon a three-layer structure of the base, emitter and collector regions of the transistor. The base region can be thought of as a very thin film sandwiched between the emitter and collector regions. A small amount of current injected from the base region is amplified by the collector–emitter region. The gain of this process is determined by the relative size of the base region, the physical distance between the collector and emitter regions, and other factors.

The base–emitter voltage applied to the transistor modulates the size of the base. When the voltage exceeds the transistor’s threshold voltage, the base–emitter junction is turned on and current flows from the base terminal to the emitter terminal. This then creates an electric field in the base region, which induces an electron transfer from the emitter region to the collector region. This increases the electric semi-conduction of the collector region, thus allowing more electric current to flow through it.

The current must also flow through the base-emitter junction, thus allowing the electric current to flow in the same direction between collector and emitter. The collector-base voltage applied to the transistor further modulates the size of the base region, thereby allowing the transistor to amplify and control electric current. The proportion of current flowing through the collector–base junction is determined by the relative resistance at the collector–base junction, which in turn controls the gain of the transistor.

The JTDB75 transistor is designed for use in high-frequency applications, making it ideal for use in sensitive communication circuits. It is also relatively small and relatively low cost, making it suitable for a variety of applications. It is found in a variety of consumer electronic products such as digital cameras, cell phones, and medical imaging equipment, as well as in military, aerospace and industrial applications.

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