KDZLVTFTR130 Discrete Semiconductor Products |
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Allicdata Part #: | KDZLVTFTR130TR-ND |
Manufacturer Part#: |
KDZLVTFTR130 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 130V 1W SOD123FL |
More Detail: | Zener Diode 130V 1W Surface Mount SOD-123FL |
DataSheet: | KDZLVTFTR130 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09834 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 130V |
Tolerance: | -- |
Power - Max: | 1W |
Current - Reverse Leakage @ Vr: | 5µA @ 102V |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | SOD-123FL |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Zener - Single
The KDZLVTFTR130 belongs to a family of single diodes with enhanced efficiency and capability. It is being used in applications such as power supply, signal conditioning, voltage regulation, or RF circuitry. In terms of power handling capacity, the device can easily handle up to 130 watts without requiring additional cooling or external devices for voltage regulation. The maximum reverse voltage the device can handle is 150 V DC.
Application Field
The KDZLVTFTR130 is used in various applications due to its wide voltage range, low voltage capability and high power handling capacity. The device is ideally suited for protection against high voltage transients and overvoltage conditions. It is also used in safety applications to ensure protection against electric shock. Further, it can be used for voltage regulation in high-power devices such as motors, LED lighting, and lighting control systems. The device can also be used in RF circuits to ensure that the correct voltage and impedance levels are maintained so as to prevent any damage due to high voltage transients.
Working Principle
The device works on the principle of reverse bias of a diode. When the forward voltage applied to the diode is greater than the breakdown voltage, or Zener voltage of the diode, current will flow in the reverse direction. This process causes the PN junction to become more doped proving more resistance to the current flow. This makes the voltage drop more until it reaches a level where the dissipation of energy is low and is rapidly absorbed. The device works on the principle of the Zener diode, which ensures the applied voltage is adequately clamped.
Features and Benefits
The device offers several features and benefits, such as:
- High thermal stability, ensuring reliability in harsh operating conditions
- High efficiency, with low power consumption and high power output
- High durability, with higher tolerance to high temperatures
- Wide voltage range, so it can effectively handle high voltage transients and overvoltage conditions
- Excellent RF performance, with high power handling capacity, low loss of power, and high efficiency
- Higher circuit integrity, with low noise and low power losses
The specific data is subject to PDF, and the above content is for reference
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