Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 200mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 500mA, 2V
Power - Max:	10W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	KSA473

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Introduction

KSA473OTU is a type of single bipolar junction transistor (BJT). It is a wide-band, NPN, plastic encapsulated transistor which can be used for a variety of applications. It is designed for high-current and high-voltage applications, and can provide robust operation over an extreme range in temperature and power requirements. KSA473OTU transistors are commonly used in automotive, consumer and industrial applications.

Features

KSA473OTU boasts a wide range of features, including: * New high-speed switching characteristics* Wide variety of application areas* Robustness over a wide range of temperatures * High-current and high-voltage requirements* Surface-mountable* Low power consumption

Application Fields

KSA473OTU is suitable for use in a variety of applications, including amplifier circuits, power switching, pulse and signal processing circuits, and switching regulators. It is also used in automotive, consumer and industrial applications such as motor controllers, computers, smart meters, and power supplies.

Working Principles

KSA473OTU transistors work on the principle of a three-layer base region formed between an N-type layer and a P-type layer. This structure is secured with the help of a positive resistance material (Insulating) which prevents the current from flowing from one section to the other. A current, or a base current, is applied to the N-type layer of the transistor when the input signal is connected to the collector terminal. This current is used to activate the base region which allows the electrons to flow from the N-type layer to the P-type layer and vice versa. This current-controlled current flow from the collector to the emitter generates a voltage difference, and connects the transistor to the supply voltage. This voltage difference, called the base-emitter voltage, and is used to control the output current in the transistor. The current applied to the base, and consequently, the base-emitter voltage can be varied over a wide range of power requirements to control the output current of the transistor. This mechanism is used in a wide range of electronics applications and is suitable for applications that require high current and voltage requirements, as well as robust interruption over a wide range of temperatures.

Conclusion

KSA473OTU is a single bipolar junction transistor (BJT) designed with an advanced structure to provide high-current and high-voltage requirements in a wide variety of applications. With features such as robustness over a wide range of temperatures, and low power consumption, KSA473OTU is the preferred choice for power switching, amplifier circuits, pulse and signal processing circuits, and switching regulators in automotive, consumer and industrial applications.

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