Allicdata Part #: | KSB907TU-ND |
Manufacturer Part#: |
KSB907TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 40V 3A I-PAK |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 40V 3A ... |
DataSheet: | KSB907TU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 4mA, 2A |
Current - Collector Cutoff (Max): | 20µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 3A, 2V |
Power - Max: | 15W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
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Transistors - Bipolar (BJT) - Single
The KSB907TU is a high-voltage, two-terminal device manufactured by Keddell Corporation and is part of their family of high-performance transistors developed for use in high-frequency and other high-performance circuits. The KSB907TU is a NPN Silicon Planar epitaxial type of transistor with a maximum collector-emitter voltage rating of 500V and a maximum collector current rating of 2.5A. It has a maximum operating frequency of 600MHz and is suitable for applications such as Class B-D audio amplifiers, high-power switching, and current-drive applications.
A common application of the KSB907TU is as a driver for LEC displays. The built-in emitter base capability makes it possible to drive the input of LECs at relatively low voltages (from low on-state voltages) while achieving relatively high current capacity. As a general purpose driver, the KSB907TU can also be used to switch digital logic and drive relays.
The KSB907TU is designed to work with both low voltage (<50V) and medium voltage (20-400V) operations. It is an easy-to-use device as it does not require extra bias circuitry and the prototype has been tested and found to perform up to its design parameters.
The basic working principle of a KSB907TU device consists of the following stages:
- The basic principle of the KSB907TU is that of a bipolar junction transistor. A voltage applied to the base causes current to flow between the emitter and collector of the device, allowing the transistor to act as an amplifier or switch.
- As the applied voltage is increased, the base current , the collector current, and thus the collector-emitter voltage all increase. This voltage is called the saturation voltage, the point at which all the current is flowing through the transistor.
- At the same time, the collector current is reduced when the base voltage decreases and the saturation voltage decreases. This voltage is called the cut-off voltage and corresponds to the point where all the current stops flowing through the transistor.
The KSB907TU is a high-voltage, two-terminal device designed for use in high-performance circuits. It is an easy-to-use device that does not require extra bias circuitry and has been tested and found to perform up to its design parameters. With its maximum collector-emitter voltage rating of 500V and maximum operating frequency of 600MHz, this device can be used for a variety of applications such as Class B-D audio amplifiers and high-power switching.
The specific data is subject to PDF, and the above content is for reference
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