KSD73YTSTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	2V @ 500mA, 5A
Current - Collector Cutoff (Max):	5mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1A, 10V
Power - Max:	30W
Frequency - Transition:	20MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	KSD73

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Introduction

KSD73YTSTU is a single bipolar junction transistor (BJT) which are widely used in integrated circuits due to their small footprint and low power consumption. This report will explain the application fields and working principle of the KSD73YTSTU.

Applications

KSD73YTSTU is used for amplifier applications that require low noise amplification, such as medical imaging, electrocardiograms, audio frequency amplifiers, radio frequency amplifiers and instrumentation.It is also used in frequency conversion, modulation and demodulation of various electrical signals. It is frequently used in analog integrated circuits, digital switching and logic circuits, linear circuits, and also as a switch between two amplifiers.

Working Principle

KSD73YTSTU is a three-terminal device composed of two p-type and one n-type semiconductor materials. With each terminal uses for base, collector, and emitter. The base connection is used to control the current flowing from collector to emitter.When the base terminal receives an input signal, it will drive current from the base to the emitter. This current will then cause a larger amount of current to flow through the collector to the emitter. This is the principle behind the amplifier capability of the KSD73YTSTU.The input signal is first amplified by a transistor before it is outputted. This makes the KSD73YTSTU ideal for applications where amplified signals are desired.

Conclusion

KSD73YTSTU is a single bipolar junction transistor with wide application fields. It is mostly used in amplifier applications that require low noise amplification such as medical imaging, electrocardiograms, audio frequency amplifiers, radio frequency amplifiers and instrumentation. It is composed of two p-type and one n-type semiconductor materials. When an input signal is applied to the base, the transistor will amplify the signal by driving current from the base to the emitter, thus providing an amplified signal from the collector.

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