KSD880Y Allicdata Electronics
Allicdata Part #:

KSD880Y-ND

Manufacturer Part#:

KSD880Y

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 3A TO-220
More Detail: Bipolar (BJT) Transistor NPN 60V 3A 3MHz 30W Throu...
DataSheet: KSD880Y datasheetKSD880Y Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: KSD880
Description

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KSD880Y Application Field and Working PrincipleThe KSD880Y is a bipolar (BJT) single transistor designed and manufactured by a Korean semiconductor company, Innocean Corp. This transistor is designed for high-speed applications, such as fast switching, power control and signal switching.The KSD900Y is built on the Ferro-Voltaic process and is designed to be easily connected to compute platforms and interface systems. Its maximum collector-emitter voltage rating is 40V, and it has a particularly high current-handling capability up to 1A in its operations. With such specifications, It is ideally suited to build fast switching circuits, as it can effortlessly switch high current quickly from the input to the output.In terms of its working principle, the KSD900Y can be understood in terms of three distinct stages of operation. First, when the transistor is in its cut-off stage, no current can flow from the collector to the emitter. Second, when the transistor is in its saturation stage, the collector-emitter current can flow freely, even with a low base-emitter voltage. Finally, in the linear active stage, the current from the collector to the emitter increases exponentially with the increasing base-emitter voltage. This stage is typically used in power amplifying and switching applications.This transistor has many uses in the world of electronic circuits. These can be seen in its application fields such as precision rectification circuits, small signal amplification, switching, power control and even in pulse-width modulation circuitry. To illustrate this, let’s consider how the KSD900Y can be used in a pulse-width modulation circuit. In this type of circuit, the width of an input signal pulse is modulated, meaning that it is changed according to various characteristics of the input signal. To do this, the signal must be converted into a signal whose width is proportional to the input signal’s characteristics (pulse envelope). The KSD900Y’s linear active stage helps the pulse-width modulation circuit to amplify and convert the signal from the input to the output.In addition, the KSD900Y has been used in many other applications, such as driver stages, controlled rectifier circuits, remote control units and digital logic circuits, as it is extremely reliable and can be connected to other devices, as well as being able to handle high current.In conclusion, the KSD900Y is a reliable, high-speed transistor that can be used in a myriad of applications, from power control and signal switching to precision rectification and modulation circuit. Its application fields are wide-ranging, but the key to its success rests on its working principle, which makes it an ideal choice for application requiring high current handling and controlled conversion of input signal to output.

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