| Allicdata Part #: | KSD986OS-ND |
| Manufacturer Part#: |
KSD986OS |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN DARL 80V 1.5A TO-126 |
| More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 1.5A... |
| DataSheet: | KSD986OS Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 1.5A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 4000 @ 1A, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AA, TO-126-3 |
| Supplier Device Package: | TO-126-3 |
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Transistors - Bipolar (BJT) - Single
The KSD986OS (Kronik Semiconductor Device: 986OS) is a high-performance silicon on insulator (SOI) bipolar junction transistor (BJT) that is available in single package configurations. It was developed by an established Japanese semiconductor company, and is used in a wide range of applications due to its superior temperature stability and performance when compared to its competitors.
This BJT is notable for its lower application voltage and power consumption when compared to other BJTs, its small package size, and its ability to achieve superior performance results in harsh environments. Its capabilities make it stand out in many different applications, especially those where a high degree of accuracy and reliability is required.
KSD986OS is most commonly used in power management applications. Its superior thermal capabilities allow it to manage a large amount of power with no loss in efficiency. Its package size and low voltage requirements make it ideal for use in small, portable devices, such as smartphones, tablets, and wearables. It can be employed to regulate the power consumption of these devices in order to ensure maximum battery life. It is also commonly used in automotive applications where its high voltage tolerance, heat dissipation, and fast switching times make it an ideal candidate for electronic control units.
The operating principles of the KSD986OS are based on a common-base configuration. It can be used either in a push-pull circuit configuration or a single-ended topology. In the push-pull circuit, the base-emitter voltage of the BJT is used to modulate the drain-source current, while in the single-ended topology, the base-emitter voltage is used to modulate the drain current. The BJT is controlled by a base current, which is used to regulate the emitter-base voltage. The emitter-base voltage, in turn, modulates the drain current, thus controlling the drain-source current. This current then controls the power consumed by the load.
The KSD986OS has a breakdown voltage of 70V and a power rating of 100W. It operates over a wide temperature range from -40°C to 150°C, and is capable of withstanding voltages up to 500V. It can be used at frequencies from 10MHz to 1GHz and at power levels up to 25W. The maximum collector current is 3A. It is available in single package configurations, including SOT-23-5, SOT-23-6, SOT-223-5, SOT-223-6, SOT-323-5, and SOT-323-6.
The KSD986OS is a versatile, high-performance BJT that is suitable for use in a wide range of applications. Its superior temperature stability, power management capabilities, and compatibility with a range of package configurations make it an excellent choice for many different projects. Furthermore, its low application voltage and power consumption make it suitable for use in portable and low-power applications. This versatile BJT has been used in a variety of applications, from automotive control systems to power management for mobile devices.
The specific data is subject to PDF, and the above content is for reference
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KSD986OS Datasheet/PDF