KSH112GTM_NB82051

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The KSH112GTM_NB82051 is a single bipolar junction transistor (BJT). It is designed to deliver high power and low-voltage performance in a single-package, enabling new levels of efficiency and cost-effectiveness. The components have a wide range of applications in industries such as lighting, automotive, and aerospace, as well as in consumer electronics.

A BJT consists of three terminals: the emitter, base, and collector. The emitter is responsible for releasing electrons into the base, while the collector is responsible for collecting the electrons. Between the emitter and collector, a small amount of current is needed to open and close the transistor. The base then acts as a sort of "gateway," allowing current to pass from the emitter to the collector only when the transistor is opened.

The KSH112GTM_NB82051 is a high power and low-voltage BJT tailored for applications requiring superior performance and efficiency. Its low threshold voltage and very low "on" resistance can provide significant power savings. In addition, the device has been engineered to provide an extended temperature range, enabling it to operate in a wider range of ambient temperatures than many other components.

In addition to its superior performance, the KSH112GTM_NB82051 is designed to be simple and easy to use. It boasts a high-speed switching speed, making it easy to integrate into existing applications. Its simple five-pin design can easily be integrated into most wiring systems or interconnects without the need to modify existing infrastructure.

The KSH112GTM_NB82051 can be used to build a wide range of products and applications, including motor control circuits, cellular telephone transmitters, and wireless audio systems. This device can improve performance and energy efficiency in consumer electronics, automotive, and aerospace applications. It can also be used in medical equipment, industrial automation, and communications devices.

In summary, the KSH112GTM_NB82051 is a single bipolar junction transistor (BJT) designed for high power and low voltage applications. Its low threshold voltage, very low “on” resistance and small size enable superior performance and efficiency in a wide range of applications. Its five-pin design enables easy integration into a variety of wiring systems, and its fast switching speed allows for easy integration into existing applications. Its many features make it an ideal device for a wide range of consumer electronics, automotive, and aerospace applications.

The specific data is subject to PDF, and the above content is for reference