KSP14BU Allicdata Electronics
Allicdata Part #:

KSP14BU-ND

Manufacturer Part#:

KSP14BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 30V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 500m...
DataSheet: KSP14BU datasheetKSP14BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The KSP14BU application field and working principle belongs to the single bipolar transistors (BJTs). A bipolar transistor (BJT) is a three-terminal semiconductor device consisting of two p-n junctions. It is available in both NPN and PNP types. A BJT is a type of active electronic component in which a current flows between two bases and a collector. The base-collector voltage applied to the transistor will control the collector current. The transistor will amplify the input signal and can be used as a switching device to turn on and off loads, circuits, and other electronic systems.

The KSP14BU has a Collector-Base voltage rating of 60V. This high voltage rating allows the BJT to be used in circuits operating at higher voltages. It also has an impressive Collector-Emitter voltage rating of 40V and can handle a maximum power dissipation of 450mW. The KSP14BU is one of the most popular BJTs and is used in a variety of applications including high-voltage power conversion, high-speed switching, and signal processing.

The working principle of the KSP14BU can be summarized as follows. A small current applied to the base-emitter junction controls a much larger current between the collector and emitter. This operation is due to the minority carrier injection, which enhances the conduction between collector and emitter. When a positive voltage is applied to the base and a negative voltage is applied to the collector, the BJT turns on and a current will flow between the base and collector.

The KSP14BU can be used in a variety of electronic circuits and systems. It is used in high-voltage circuits, where it can switch very high currents or voltages. It is also used in many power management applications such as motor control, DC-DC converters, and power factor correction. Additionally, the KSP14BU is used in RF amplifiers, audio amplifiers, and signal processing applications. It can also be used in analog and digital circuit design.

The KSP14BU is a cost-effective and efficient single bipolar transistor that can be used in a variety of applications. It has an impressive voltage rating, a large current carrying capacity, and can handle a maximum power dissipation of 450mW. Its simple control circuit allows for easy operation and control. With its wide application field and excellent performance, the KSP14BU is a reliable and cost-effective choice for many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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