KSP62BU Allicdata Electronics
Allicdata Part #:

KSP62BU-ND

Manufacturer Part#:

KSP62BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 20V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP - Darlington 20V 500m...
DataSheet: KSP62BU datasheetKSP62BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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Bipolar Junction Transistor (BJT) is a type of transistor commonly used in personal and commercial electronics. Single BJT consists of two PN junctions connected in series, and can be used for amplification and switching. The type KSP62BU is a high voltage, low current single BJT with a maximum collector current of 1.25mA and a maximum collector-emitter voltage of 30V, making it suitable for a wide variety of common electronics applications.

A BJT is composed of the three terminals: emitter, base and collector. The current passing through each junction is controlled individually by the base-emitter, which is forward-biased, and the base-collector, which is reverse-biased. The junction between the emitter and collector is also reverse-biased.

When a BJT is biased properly, the current passing through the base influences the current passing through the collector. At higher current levels, the current passing through the collector reaches a saturation point. This action is known as “current gain”, because the amount of current passing through the collector is amplified in relation to the amount of current entering the base. The current gain of a typical BJT ranges from 20-500.

The KSP62BU’s applications include linear and switching circuits, motor control and power transistor circuits, amplifier and microphone circuits, and audio and video circuits. In linear applications, the KSP62BU can be used for amplification, oscillation, or power supply circuits. In switching applications, the KSP62BU’s low current characteristics make it suitable for use in circuits with low power, such as relays and solenoids. It is also suitable for low noise and wide bandwidth precision amplifier applications.

The KSP62BU’s working principle is relatively simple. When a voltage is applied to the base, it charges up and current starts to flow through the base-collector junction. This in turn causes the current flow through the collector to increase, allowing for current gain and the switching effects of a BJT. The voltage at the base influences the amount of collector current, which makes the KSP62BU suitable for applications that require both amplification and switching.

In summary, the KSP62BU is a high voltage, low current single BJT which can be used for a wide variety of applications, ranging from linear and switching circuits, to motor control and power transistor circuits. Its simple working principle, based on current gain and switching, makes it easy to use and design with. The KSP62BU is thus a popular and versatile choice for engineers looking to build electronics projects.

The specific data is subject to PDF, and the above content is for reference

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