KSP92BU Allicdata Electronics
Allicdata Part #:

KSP92BU-ND

Manufacturer Part#:

KSP92BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 300V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 625m...
DataSheet: KSP92BU datasheetKSP92BU Datasheet/PDF
Quantity: 2922
Stock 2922Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSP92
Description

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The KSP92BU is a commonly used NPN small-signal transistors based on BJT (Bipolar Junction Transistor) technology. It is classified as single because it only contains one BJT circuit - an n-channel with a p-channel connected together. The primary application field of the KSP92BU is amplifier circuits, due to its ability to provide a high level of power gain. The working principle of the KSP92BU is relatively simple. The device consists of three layers of semiconductor materials - a N-type layer, a P-type layer and a base, which is sandwiched between the other two layers. When a voltage is applied to the base, a vertical electrical field is created, allowing electrons to "tunnel" through the N-type layer, forming an NPN union. This process allows current flowing through the two junctions and producing an amplified electric current output.

As the transistor is in the "on" state, current flows from the Collector (C) to the Emitter (E). This current flows through the N-type layer and forms an electron collector, producing an amplified voltage in the P-type layer. This amplified voltage is then directed through the collector, where it is fed into the emitter and pushed out into the external circuit. As this process continues, a continuous and amplified current is produced. When the voltage is reduced, the process is reversed, and the electrons flow back to the N-type layer, shutting off the transistor.

To achieve the maximum power gain, the device must be operated in the active region, where both forward and reverse voltages are sufficiently high. The KSP92BU is designed to operate at very low voltages and is usually used in applications where a high gain and improved noise immunity are desired. Additionally, the KSP92BU features excellent temperature stability and high frequency response.

The power gain of the KSP92BU is determined by the current ratio from the Collector to the Emitter (Ic/Ie). Generally, it is recommended to use a resistor at the collector terminal in order to ensure optimum performance and to reduce noise. The KSP92BU offers low cost and high performance in signal conditioning and amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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