KST13MTF Allicdata Electronics

KST13MTF Discrete Semiconductor Products

Allicdata Part #:

KST13MTFTR-ND

Manufacturer Part#:

KST13MTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 30V 0.3A SOT23
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 300m...
DataSheet: KST13MTF datasheetKST13MTF Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 350mW
Frequency - Transition: 125MHz
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: KST13
Description

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The KST13MTF is a single bipolar junction transistor (BJT) that is commonly used in a variety of applications. This type of transistor is a three-terminal semiconductor device that can control the current flowing between two of its terminals by modulating the voltage applied to the third terminal. It is often used in amplifiers, oscillators, switches, and can also be utilized in power conversion circuits.

The KST13MTF is composed of two p-type base layers, one n-type collector layer, and a single n-type emitter layer. The base layer is responsible for controlling the current that flows between the collector and the emitter. The collector layer connects the base and emitter layers, while the emitter layer is connected directly to ground.

The device can be operated in either of two modes: active or saturated. In active mode, the collector-emitter voltage is less than the voltage applied at the base. This allows the current between the emitter and collector to vary depending on the power applied, thus allowing the transistor to act as an amplifier or switch. In saturated mode, the collector-emitter voltage is greater than the voltage applied at the base. This forces the collector-emitter current to remain constant regardless of the applied power, making the device operate more like an on/off switch.

The KST13MTF is most commonly used in amplifiers and audio frequency power conversion circuits. It can be used to produce an audio signal of a certain frequency and volume from an input signal. The device is also capable of amplifying weak signals to higher levels as well as decreasing strong signals to prevent distortion. In power conversion circuits, the device is used for switching power from AC to DC and vice versa.

In addition to being used in amplifiers and power conversion circuits, the KST13MTF is also used in switching circuits. It is capable of controlling the flow of electricity between components by quickly switching between on and off states. It can be used to make complex switching computers or to gate signals in transient detectors. It is also frequently used in circuit protection systems to prevent damage caused by excessive current or voltage.

The KST13MTF has a number of advantages that make it an ideal choice for a variety of applications. These advantages include its small footprint, low power consumption, high current gain, high input and output impedances, low noise, and low sensitivity to temperature variations. Additionally, its construction is relatively simple which makes the device easy to integrate in a variety of circuits.

In summary, the KST13MTF is a single bipolar junction transistor that can be used in amplifiers, oscillators, and power conversion circuits. It is composed of two p-type base layers, one n-type collector layer, and a single n-type emitter layer. It has a number of advantages such as its small size, low power consumption, high current gain, and high input and output impedances. Additionally, its construction is relatively simple which makes it easy to integrate into a variety of circuits.

The specific data is subject to PDF, and the above content is for reference

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