LL5819 L0G Allicdata Electronics
Allicdata Part #:

LL5819L0G-ND

Manufacturer Part#:

LL5819 L0G

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE SCHOTTKY 40V 1A MELF
More Detail: Diode Schottky 40V 1A Surface Mount MELF
DataSheet: LL5819 L0G datasheetLL5819 L0G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.08892
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Description

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The LL5819 is a series of devices comprised of low forward voltage (VF) Schottky Barrier Diodes (SBDs). The LL5819 is designed to operate at a total reverse voltage of 10V and a forward voltage of 0.45V at an operating temperature of -55°C to 125°C. It offers a 5-A current capacity and an low-noise performance up to and above 5.5 MHz.

The LL5819 series is housed in an ultra-small, SMD package, making it well suited for applications requiring miniaturization. The device is also RoHS-compliant and lead-free, allowing for easy integration in consumer products and other applications with stringent environmental requirements.

The LL5819 series is a low-forward-voltage Schottky Barrier Diode designed to reduce power loss in applications where the forward voltage of the diode is critical. Its low forward voltage minimizes power losses in switching power supplies, motor-control circuits, digital isolators, battery management systems, solar energy systems, and other consumer electronics.

The LL5819 series is designed to operate in a wide range of applications with a total reverse voltage of 10V and a forward voltage of 0.45V. It also features an low-noise operation that can be used in noise-sensitive communication circuits and high-frequency transmission lines.

The device’s RoHS compliance, lead-free construction and ultra-small package simplify environmental considerations for most applications. The device is also capable of operating over a wide temperature range, from -55°C to 125°C.

The working principle of the LL5819 series is based on the same principles as other Schottky Barrier Diodes. The device works by allowing current to flow freely from the “anode” to the diode\'s “cathode” and blocking any current from flowing in the opposite direction.

When an external voltage is applied to the diode, the operation of the diode is determined by the relationship between the applied voltage and the thickness of an inversion layer that is created within the diode at its surface. When the applied voltage is less than the threshold voltage, the inversion layer prevents the current from flowing through the diode. As the applied voltage increases and surpasses the threshold voltage, the inversion layer dissipates and the diode becomes conductive.

The LL5819 series operates with a total reverse voltage of 10V, a forward voltage of 0.45V, and a total leakage current of 1µA. These characteristics allow the device to feature a low-noise operation up to and beyond 5.5 MHz.

The LL5819 series is an excellent choice for applications including switching power supplies, motor-control circuits, digital isolators, battery management systems, solar energy systems, and other consumer electronics. Its low-forward-voltage design and ultra-compact package combine to lessen power loss and reduce the footprint of the system. Additionally, its RoHS compliance and lead-free construction reduce environmental concerns.

The specific data is subject to PDF, and the above content is for reference

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