LLSD103A-TP Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	40V
Current - Average Rectified (Io):	350mA (DC)
Voltage - Forward (Vf) (Max) @ If:	600mV @ 200mA
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	10ns
Current - Reverse Leakage @ Vr:	5µA @ 30V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:	Mini MELF
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	LLSD103

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LLSD103A-TP Application Field and Working Principle

The LLSD103A-TP is a rectifier type diode, which is specifically designed for high speed applications. This type of rectifier is used in various applications such as: switching power supplies and converters, motor control, high power pulses, etc.The LLSD103A-TP rectifier has a high reverse voltage rating of 200 volts, a forward current rating of 6 amps, and is also capable of handling fast switching applications up to 300 kHz. Its fast switching capabilities make it an ideal choice for switching power supplies and converters.The main components of the LLSD103A-TP rectifier are a diode, a silicon chip, and an oxidized silicon substrate. The diode is made of two parts, a rectifying junction and a Schottky barrier. The rectifying junction is formed by a p-type and an n-type layer, and the Schottky barrier is formed by a thin barrier layer between those two layers. The silicon chip and the silicon substrate provide the necessary insulation and structural support for the diode.The working principle of the LLSD103A-TP rectifier is based on the “forward biased” mechanism. When a forward voltage is applied to the diode, the p-type layer becomes positively charged and the n-type layer becomes negatively charged. This creates a potential barrier between the two layers, resulting in a high forward bias.When a positive voltage is applied to the anode side of the diode, the electrons in the p-type layer are forced towards the anode, while the holes on the n-type layer are forced towards the cathode. This creates a potential difference between the two sides of the diode, resulting in a current flow through the diode.The LLSD103A-TP rectifier is capable of high speed switching applications, due to its fast recovery time. It also has a low forward voltage drop and low reverse voltage leakage, which makes it an ideal choice for high power converters and motor control applications.In conclusion, the LLSD103A-TP rectifier is an excellent choice for various high speed applications, due to its high forward voltage and fast recovery time. It is also highly reliable and capable of providing a high level of performance. Thus, it is suitable for use in various applications, such as switching power supplies, converters, motor control, and high power pulses.

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