LMN200B02-7 Discrete Semiconductor Products

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Special purpose transistors are designed to be used in special applications, unlike conventional transistors. LMN200B02-7 is a special purpose transistor from NXP Semiconductors and is a 25V, 200mA PNP lateral bipolar junction transistor (BJT). It has a large current gain and low saturation voltage, making it suitable for high speed switching and amplifier applications.

Application Fields of LMN200B02-7

The LMN200B02-7 is primarily used in high speed switching applications where minimum switching times are required. It is suitable for general switching, amplification, class A and class B amplifiers, and also current sinks. In addition, it can be used in audio applications and as a power amplifier, as it features low distortion and low crossover distortion while operating on audio frequencies.

LMN200B02-7 can also be used in automotive applications, such as in controllers for variable valve timing and in engine management systems. It can also be used in lamps and lighting, especially for automotive lamps and automotive lighting applications, as it offers low saturation voltage, high current gain, and low noise characteristics.

Working Principle of LMN200B02-7

The LMN200B02-7 is a PNP lateral BJT, with an emitter-base junction, an emitter-collector junction, and a collector-base junction. When a voltage is applied to the emitter-base junction, electrons move from the emitter to the base, creating a current. This current is then amplified by the collector-base junction and moves from the collector to the base. This current is then amplified further by the emitter-collector junction and moves from the collector back to the emitter. This cycle, which is repeated multiple times, is the basis of the operation of a lateral BJT.

In the LMN200B02-7, the emitter-base junction has a breakdown voltage of 25V, and a maximal current gain of 250. The emitter-collector junction has a junciton voltage of 0.8V. This makes the Transistor suitable for a range of applications, from high speed switching to audio applications.

Conclusion

LMN200B02-7 is a special purpose transistor, designed by NXP Semiconductors. It is a 25V, 200mA PNP lateral BJT and is suitable for a wide range of applications, including high speed switching, amplification, audio applications and automotive applications. It is characterized by its low saturation voltage, high current gain and low noise characteristics. These characteristics allow the transistor to be used in a variety of applications.

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