Allicdata Part #: | LTC4440EMS8E-5#TRPBF-ND |
Manufacturer Part#: |
LTC4440EMS8E-5#TRPBF |
Price: | $ 1.53 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Linear Technology/Analog Devices |
Short Description: | IC HIGH-SIDE DVR HS HV 8-MSOP |
More Detail: | High-Side Gate Driver IC Non-Inverting 8-MSOP-EP |
DataSheet: | LTC4440EMS8E-5#TRPBF Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 1.38802 |
Current - Peak Output (Source, Sink): | 2.4A, 2.4A |
Base Part Number: | LTC4440 |
Supplier Device Package: | 8-MSOP-EP |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 10ns, 7ns |
High Side Voltage - Max (Bootstrap): | 80V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 1.3V, 1.6V |
Voltage - Supply: | 4 V ~ 15 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | High-Side |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Integrated Power Electronics (IPE) is a rapidly developing field of power electronics that is becoming increasingly important in modern electronic products. Power Management Integrated Circuits (PMICs) are highly integrated circuits specifically designed to manage the power supply and distribution of a system. PMICs are typically designed to reduce electromagnetic interference (EMI) and thermal noise, as well as limit inrush current and reduce power losses during operation. A gate driver is one of many types of PMICs available and is useful for driving power switch MOSFETs. One example of a gate driver is the LTC4440EMS8E-5#TRPBF, which offers excellent performance and reliability in moderate input voltage environments.
The main application field for the LTC4440EMS8E-5#TRPBF is in power systems, such as audio amplifiers, telecommunication systems, and battery management units. This device is capable of driving N- and P-channel MOSFETs and IGBTs from a single supply, and provides a low-side gate driver with a separate high-side gate driver for switching between loads and sources. It can also be used in automotive applications, such as engine control and airbags, due to its wide temperature and wide supply voltage range. The device has a maximum operating voltage of 16V, and is a single-channel device that can drive up to four MOSFETs in parallel.
The working principle of the LTC4440EMS8E-5#TRPBF is based on the utilization of high current drivers, which are connected in series and energized in order to drive the gates of the power switch MOSFETs. The high current drivers are typically configured with power FETs connected in series, which act as open and closed switches to control the voltage applied to the gates of the power switch MOSFETs. The high current drivers are then connected to the load side of the input voltage, providing sufficient current to drive the gates of the power switch MOSFETs at the appropriate voltage level. The LTC4440AMS8E-5#TRPBF also includes an adjustable reference voltage, which can be used to optimize the gate driving efficiency.
In addition to the adjustable reference voltage and the high current drivers, the LTC4440EMS8E-5#TRPBF also includes a sense amplifier. The sense amplifier monitors the voltage drop across the FETs and is used to adjust the current through the FETs in order to improve efficiency and reduce power loss. The device also includes protection features such as over-voltage and over-current protection, as well as short-circuit protection. The device also includes a soft-start feature that helps to minimize inrush current.
The LTC4440EMS8E-5#TRPBF is an excellent choice for driving power switch MOSFETs in power systems and automotive applications. It is designed to provide a low-side gate driver with a separate high-side gate driver for switching between loads and sources. The device also includes adjustable reference voltages, high current drivers, a sense amplifier, and various protection features. The device is capable of driving up to four MOSFETs in parallel and is suitable for operating in a wide input voltage range and temperature range.
The specific data is subject to PDF, and the above content is for reference
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