
Allicdata Part #: | M25P80-VMP6TCT-ND |
Manufacturer Part#: |
M25P80-VMP6T TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 8M SPI 75MHZ 8VDFPN |
More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8) SPI 75MHz 8-VD... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 8Mb (1M x 8) |
Clock Frequency: | 75MHz |
Write Cycle Time - Word, Page: | 15ms, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-VDFPN (6x5) (MLP8) |
Base Part Number: | M25P80 |
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Memory
The M25P80-VMP6T TR is a high-performance Serial Flash memory device. The device offers 8M-bit of memory storage and is available in standard SOP8 packages. It supports higher clock frequencies than typical SPI Serial Flash devices, with a maximum speed of 75MHz. The device also features flexibility in terms of shift registers and bus protocols, allowing it to be used in any type of system.
The M25P80-VMP6T TR is a non-volatile memory device that operates with a 4-wire Serial Peripheral Interface (SPI) bus protocol. It also supports Dual and Quad I/O SPI protocols for maximum data transfer rates. The device is designed to offer extremely low power consumption when used in continuous writing and read operations. It also offers multiple protection features, such as power-off protection, write protection, and memory write protection.
Application Fields Of M25P80-VMP6T TR
The M25P80-VMP6T TR is a versatile Serial Flash memory device and can be used in a variety of applications. It is ideal for consumer, telecommunications and industrial control applications such as embedded systems requiring a small amount of non-volatile memory. The device is ideal for storing application code, configuration information, and boot code for systems with integrated microprocessors.
The device is also suitable for data storage and program memory in Internet of Things (IoT) applications. The memory device features a data write-protection feature to prevent accidental or malicious data erasure, as well as providing reliable data storage. The device can be used to store intellectual property that can be erased or reprogrammed anytime during the product’s lifecycle.
The M25P80-VMP6T TR can also be used in automotive applications. It is capable of withstanding harsh environments such as temperature extremes, vibration and impacts, making it ideal for automotive applications. The device is also capable of withstanding high shock and vibration levels with its advanced built-in ECC and wear-leveling techniques.
The device can also be used in medical applications. It is designed with high quality standards and undergoes several reliability tests to ensure it can handle higher temperatures, humidity, vibration and other environmental conditions. It is also compliant with IEC60601-1, making it suitable for medical applications.
Working Principles Of M25P80-VMP6T TR
The M25P80-VMP6T TR follows the SPI command set for read and write operations. The device has three instruction bytes: write, read, and sector erase. The write instruction allows data to be written to the memory starting at a predetermined address. The read instruction allows data to be read from the memory starting at a predetermined address.
The sector erase instruction allows data in a certain sector to be erased. The device also has features such as sequential mode and Data# Polling and Toggle Bit, which are used to guarantee the reliable erase and write operations and to assure that the device is in write enable mode and write protect mode during data write and erase operations. In addition, the device has built-in low power modes to reduce power consumption.
The M25P80-VMP6T TR also offers a number of protection features, such as write protection, power-off protection, and memory write protection. The write protect feature protects the memory from unintentional write operations by preventing the write enable pin from being triggered. The power-off protection feature allows the device to retain data even when power is removed.
The memory write protection feature allows certain areas of the memory to be protected from accidental write or erase operations. The device is also designed with a multi-level cell structure to provide highly reliable storage and data retention, even when subjected to extreme environmental conditions.
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