M27C2001-10F6 Allicdata Electronics
Allicdata Part #:

M27C2001-10F6-ND

Manufacturer Part#:

M27C2001-10F6

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EPROM 2M PARALLEL 32CDIP
More Detail: EPROM - UV Memory IC 2Mb (256K x 8) Parallel 100n...
DataSheet: M27C2001-10F6 datasheetM27C2001-10F6 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - UV
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: --
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.600", 15.24mm) Window
Supplier Device Package: 32-CDIP Frit Seal with Window
Base Part Number: M27C2001
Description

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Memory devices are widely used in computing technologies, of which M27C2001-10F6 are especially popular. The device is based on STMicroelectronics’ advanced non-volatile memory technology, offering low power consumption, high speed and reliable execution in a wide range of applications. M27C2001-10F6 allows users to store their data in the form of non-volatile memory devices, making them an important component of many large-scale information systems and digital circuits. The devices use a combination of microchip technology, including ROM (Read-only memory) and EEPROM (Electrically Erasable Programmable ROM), to store data on various storage media, such as program memory and register files.This particular device has a storage capacity of 2,097,152 words/bits, with an access time of 150ns. It is used in various application fields, such as telecommunications, medical, automotive and industrial systems.M27C2001-10F6 working principle is based on the electronic representation of data in the form of bits. The device is organized into memory cells, each consisting of a data bit, a command register and an address register. When the memory device is powered, a logic circuit is used to access the data stored in the cells.The data stored in the cell is then written to the data register and the address register is set to indicate the location of the cell. Once the address is set, a control signal is sent to the memory device which reads the data stored in the cell and transfers it to the data register. The data is then transmitted to the user interface and read by the user. It is also possible to write data to the memory devices, which are stored in the cells. The write data is sent to the address register and then written to the cells. In addition to its application in various fields, M27C2001-10F6 also offers advantages over other memory devices, such as faster read/write access time, lower power consumption and a wider range of application possibilities. It is also less expensive than similar devices. This makes it a perfect choice for a variety of applications. To conclude, M27C2001-10F6 memory devices offer users the ability to reliably store data in the form of non-volatile memory devices. They are used in a wide range of application fields and provide advantages over other memory devices, such as faster read/write access time, lower power consumption and a wider range of application possibilities. The device is an important component of large-scale information systems and digital circuits, allowing users to store their data in a secure manner.

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