M27C4001-10C1

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EPROM
Technology:	EPROM - OTP
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	--
Access Time:	100ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC (11.35x13.89)
Base Part Number:	M27C4001

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M27C4001-10C1 Application Field and Working Principle

Memories store information for use by electronic circuits. Computer memories are used in computers and other information processing machines to store binary data and instructions. The M27C4001-10C1 is an important type of memory used in fixed-application fields. In this article, we will discuss the application of the M27C4001-10C1 and its working principle.

Understanding the M27C4001-10C1 Memory

The M27C4001-10C1 is a factory-programmed 4-megabit ROM. It is a single chip, 64K x 64, 100-pin PDIP/LCC type. It consists of a non-volatile flash memory array and a controller. The non-volatile array consists of 64K (16,384 x 256) memory cells. The array is organized as 16,384 rows and 256 columns. The cells store binary values (either 0 or 1). Each cell contains two transistors and two layers of polysilicon.

Applications of the M27C4001-10C1

The M27C4001-10C1 is used in a wide range of applications, such as:

• Computer systems;
• Industrial automation;
• Automobiles;
• Consumer electronics;
• Medical equipment;
• Telecommunications;
• Avionics;
• Test and measurement equipment.

The device can be used for storing data for booting, calibration and diagnostics, font and character pattern tables, software code and data, and other applications. The device is suitable for use in applications that require high reliability, low power consumption, and a long operating life. The device is intended for use in commercial and industrial temperature ranges.

Working Principle of the M27C4001-10C1

The M27C4001-10C1 is a non-volatile memory device. It stores data even when power is removed. The device is organized as a two-dimensional array of cells. Each cell consists of two transistors and two layers of polysilicon. The memory cells are made of materials that exhibit variations in conductivity when exposed to high temperatures.The memory cells are arranged in a grid pattern. Each cell consists of a transistor and two layers of polysilicon. The transistor can be either "ON" or "OFF" depending on the amount of current that flows through it. The amount of current is determined by the amount of voltage applied to the memory cell. When a given cell is "ON," the voltage applied to it is low and the current flowing through it is high. When the cell is "OFF," the voltage applied is high and the current is low.Each cell is accessed by applying signals to the row and column lines that intersect at that cell. To read a cell, the row line is held at a logic "high" and the column line is pulsed with a sequence of logic "low" signals until the cell\'s value is accessed. To write a cell, the row line is held at a logic "high" and the column line is pulsed with a sequence of logic "low" and "high" signals to set the value of the cell.

Conclusion

The M27C4001-10C1 is an important type of memory used in fixed-application fields. It is used in a wide range of applications, such as computer systems, industrial automation, automotives, consumer electronics, medical equipment, telecommunications, avionics, and test and measurement equipment. The device is a non-volatile memory device and is organized as a two-dimensional array of cells. Each cell is accessed by applying signals to the row and column lines that intersect at that cell. The memory cells are made of materials that exhibit variations in conductivity when exposed to high temperatures.

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