
Allicdata Part #: | M27V160-100XB1-ND |
Manufacturer Part#: |
M27V160-100XB1 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC EPROM 16M PARALLEL 42DIP |
More Detail: | EPROM - OTP Memory IC 16Mb (2M x 8, 1M x 16) Paral... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - OTP |
Memory Size: | 16Mb (2M x 8, 1M x 16) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3.14 V ~ 3.47 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 42-DIP (0.600", 15.24mm) |
Supplier Device Package: | 42-PDIP |
Base Part Number: | M27V160 |
Description
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Memory
The M27V160-100XB1 is a type of memory which is used in a variety of electronic devices and systems. It is a DRAM (dynamic random access memory), a type of memory which stores data in a capacitive state. This allows the user to access the information stored in the memory in a much faster way than with other types of memory. The M27V160-100XB1 is a memor y device which is specifically designed for use in applications where power efficiency and high performance are necessary.The M27V160-100XB1 is a 16Mbit synchronous DRAM memory device, meaning that it has a fast access time and offers a greater data transfer rate than other types of memory. It is designed to be used in applications such as handheld devices, automotive electronics, gaming systems and other consumer electronics. The device is also suitable for use in industrial automation and networking applications. The M27V160-100XB1 offers an optimized architecture that reduces power consumption, enabling it to be used in lower power environments. The device has a low power standby mode, which ensures that the memory remains in standby mode until it is required. It also features an integral error correction circuit, which helps to ensure data integrity and reliability. The M27V160-100XB1 is constructed using a 64x16Kbit memory array, which is split into eight independent banks of 32Kbit. Each bank consists of 32Kbit of memory which is divided into four 8Kbit blocks. The device also has an on-chip clock generator and consists of a 64-bit, dual-ported data bus, which offers both high-speed read and write capability. The memory array is connected to an ergonomic Memory Control Interface, which offers user-friendly features such as a cascade mode and numerous special functions. In conclusion, the M27V160-100XB1 is a powerful and efficient memory device, which is well suited for a range of applications. It offers an optimized architecture that reduces power consumption, with a low power standby mode and an integral error correction circuit. The device also features an ergonomic Memory Control Interface, which provides a range of useful features.
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