M3035S-E3/4W Allicdata Electronics
Allicdata Part #:

M3035S-E3/4W-ND

Manufacturer Part#:

M3035S-E3/4W

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 35V 30A TO220AB
More Detail: Diode Schottky 35V 30A Through Hole TO-220AB
DataSheet: M3035S-E3/4W datasheetM3035S-E3/4W Datasheet/PDF
Quantity: 1000
1000 +: $ 0.45486
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 35V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The M3035S-E3/4W is a high-speed, single, ultra-low VF diode rectifier chip that has widespread applications across multiple industries.

Applications

The M3035S-E3/4W rectifier is used in a variety of devices including converters, power supplies, and chargers, where low-Qrr and low-VF are essential. The rectifier also meets automotive standards for temperature range and high efficiency. In ride-on electric vehicles, the rectifier may also be used in the battery charger as well as in high-temperature applications. It can also be used in consumer electronics such as tablets, displays, PCs, and other portable electronics. The high performance of the rectifier in these applications makes it an appealing choice for low-cost, high-reliability electronic products.

Working Principle

The M3035S-E3/4W single diode rectifier is a high-speed device that utilizes a unique structure to achieve ultra-low forward-voltage-drop (VF) under high frequencies. In this structure, a low-resistive titanium alloy layer is embedded in the bottom of a rear surface field to reduce the forward voltage drop. Then, a guard-ring provides electrostatic protection that increases the robustness of the rectifier and minimizes its path to failure.

The M3035S-E3/4W rectifier’s internal resistance is low, which reduces power dissipation and increases the efficiency of the device. Additionally, its ultra-low reverse recovery time (Qrr) minimizes switching losses and reduces total power dissipation. The rectifier’s tolerance for high temperatures and its high performance with low power input make it an attractive option for many applications.

In operation, the M3035S-E3/4W works like a typical diode rectifier. It is biased with a forward voltage that is greater than its cut-in voltage, allowing a forward current to flow when a positive voltage is applied. This causes the diode to allow current flow in one direction and block current flow in the opposite direction. The diode is said to be in a conducting state when current flow is occurring.

When the forward voltage drops below the cut-in voltage, the diode ceases to be in a conducting state and reverts to a non-conducting state. The reverse voltage must be greater than the breakdown voltage for the device to remain in the non-conducting state. Reverse current flow may occur if the reverse voltage is greater than the breakdown voltage.

Conclusion

The M3035S-E3/4W single diode rectifier is a high-performance chip that is suitable for a variety of applications. Its low-Qrr and low-VF make it desirable for use in converters, power supplies, and chargers. The robustness of the device and its tolerance for high temperatures make it a reliable choice for automotive applications. With its small size and low power consumption, the device is a great choice for consumer electronics and portable devices as well.

The specific data is subject to PDF, and the above content is for reference

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