M304016Z8RSM9HP Allicdata Electronics
Allicdata Part #:

M304016Z8RSM9HP-ND

Manufacturer Part#:

M304016Z8RSM9HP

Price: $ 3.47
Product Category:

Uncategorized

Manufacturer: Hirschmann
Short Description: MAR1030-4OZZZZZZZZZZZZZZZZRRRRRR
More Detail: N/A
DataSheet: M304016Z8RSM9HP datasheetM304016Z8RSM9HP Datasheet/PDF
Quantity: 1000
1 +: $ 3.15000
Stock 1000Can Ship Immediately
$ 3.47
Specifications
Series: *
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

M304016Z8RSM9HP is a type of DRAM, an integrated circuit that contains millions of transistors and capacitors that allow for the overall storage of digital information in a computer. It has many uses in many fields, such as in industrial and automotive applications.For industrial applications, M304016Z8RSM9HP is used in data caches, for buffering and data storage. In certain industrial applications, where a lot of data needs to be processed within a set period of time, dealing with a limited resource (memory) is essential. The M304016Z8RSM9HP also helps reduce the number of instruction executes per instruction cycle, thus increasing productivity and reliability.In automotive applications, M304016Z8RSM9HP helps to reduce the time needed to design, develop, and integrate information systems into engine inputs and outputs. Automotive engineers are able to reduce the time taken to write code or configure autonomous algorithms, as the M304016Z8RSM9HP helps to drastically reduce the amount of data to be processed in each transaction. This memory is also used in vehicle tracking systems such as lane-keeping systems or collision avoidance systems, as it allows for the sharing of data between the car and the sensors.In terms of working principles, the M304016Z8RSM9HP essentially has two main components: a dynamic random-access memory (DRAM) and an array of memory cells. The DRAM memories use a special type of capacitors, integrated on an array of memory cells, that can hold bits of information and can be accessed at any time. Additionally, a highly parallel interface has been developed which allows multiple memory cells to be accessed simultaneously in order to reduce the time to access data.The M304016Z8RSM9HP is also equipped with various features, such as embedded error correcting codes (ECC) to ensure data integrity. In order to reduce power consumption, the DRAM’s operating voltage can be adjusted by using an on-die voltage regulator. Other features such as register-level redundancy, autorefresh, and a range of refresh rate options are present as well.In conclusion, the M304016Z8RSM9HP is a type of DRAM that has been designed to meet the needs of many different industries. The highly parallel interface allows for the simultaneous access of multiple memory cells, while the embedded error correction codes ensure data integrity. The adjustable voltage regulator helps to reduce power consumption, and additional features such as register-level redundancy, auto-refresh, and refresh rate options make it even more efficient.

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