M58BW16FB5T3F TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

M58BW16FB5T3F TR is a type of memory product made by Western Digital, which is based on embedded Non-volatile memory (NVM) technology. It is primarily used as a data storage device for embedded systems. It provides reliable, non-volatile storage for data at both program and data levels, and can be used in applications with a wide range of performance and power requirements.This memory product is based on the 512 Mbit Multi-Level Cell (MLC) NAND Flash memory technology, and is designed to provide high-speed, non-volatile data storage. Data protection is provided by the implementation of Error Correction Code (ECC). The product also has built-in Read Retry and Write Retry capabilities, making it resistant to electrical disturbances and providing data reliability.M58BW16FB5T3F TR has a wide range of applications, including consumer electronics, industrial automation and medical equipment. Its high-speed data transfer performance makes it ideal for storing and retrieving large amounts of data quickly. Its data retention and reliability are beneficial for applications requiring a stable data storage device. In addition, the device is low power and has a low form factor, making it suitable for embedded designs where space and power are limited.The working principle of M58BW16FB5T3F TR is based on the NAND Flash architecture. Data is stored in cells on the device and is erased and written according to commands issued by the host processor. The device is organized into several planes, blocks and pages, each consisting of several small memory cells, which can store various types of data. In order to access data stored on the device, commands must be sent to the device in order to read or write.M58BW16FB5T3F TR is designed to be low power, efficient, and reliable. The device is optimized to use as little energy as possible while still providing a high level of data reliability. To achieve this, ECC is used to detect and correct common errors, while read and write retries are used to reduce the risk of data loss due to external disturbances. Additionally, the device has advanced wear-leveling algorithms which ensure that data is evenly distributed across cells, thus preventing data from becoming corrupted due to the erasure of a single memory cell.Overall, M58BW16FB5T3F TR is a reliable and efficient memory product, suitable for embedded systems. Its low power and high storage density make it ideal for applications with space and power constraints, while its error correction and wear-leveling algorithms provide a high level of data reliability. It is an ideal storage solution for a wide range of applications, from consumer electronics to industrial automation.

The specific data is subject to PDF, and the above content is for reference