M58BW32FB4D150

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Memory devices are essential components used in computers and various other digital systems. The M58BW32FB4D150 is a memory device that features high-speed throughput and is used in many applications. In this article, we will discuss the application field and working principle of M58BW32FB4D150 memory.

The M58BW32FB4D150 is a 32-bit dual-port random access memory (RAM) with a 16-frame burst write latency. It is commonly used in embedded systems with high speed requirements, such as automotive and medical applications. In addition, it is used in applications where multiple users are accessing memory in parallel. It is also used for volatile system memory for applications that require high-speed data lookup and manipulation.

The M58BW32FB4D150 is a high-speed dual-port random access memory that is used in a variety of applications. Its primary use is as an interface between main memory and peripherals. It can be used to store large amounts of data or to act as a buffer between two different devices. It can also be used as a first-level cache for storage or retrieval of data.

The M58BW32FB4D150 is organized as 32 bits of data per frame. Each frame can be accessed in a single read or write operation. The memory is arranged in four blocks, with each block containing four frames. Each block can be read or written separately or together in one operation. The device has a content-addressable search buffer that stores up to four entries. This allows for fast searches.

The M58BW32FB4D150 uses a dual-ported memory architecture, allowing for simultaneous access from both sides. The M58BW32FB4D150 supports both random and sequential access. The device also supports burst mode, which allows for faster data transfer rates. The device can operate at a maximum read or write speed of 200 MHz. It is available in two package sizes, a 44-pin TSSOP and a 48-pin Fine-pitch green TSOP.

The M58BW32FB4D150 has a static random access memory (SRAM) core with a write latency of 10-bits. The core allows for fast read/write operations and provides for low power consumption. The memory can be used in environmental conditions ranging from -40°C to 85°C. The device has an Built-In Self-Test (BIST) capability for easy detection of data errors and faults.

The M58BW32FB4D150 is an ideal solution for high-speed volatile system memory and other applications requiring simultaneous access from multiple components. Its combination of high-speed throughput, low power consumption, and robust features make it a versatile memory solution.

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