M68AW256ML70ND6T

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	4Mb (256K x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II
Base Part Number:	M68AW256M

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<p>The M68AW256ML70ND6T is a unique type of memory, which is developed for an application in industrial and automotive industries. It is the ideal choice for applications where a high-density memory is required. This memory is suitable for battery backup and mixed-mode operation applications. In this article, we will take a look at the application field and working principle of the M68AW256ML70ND6T.</p><p>The M68AW256ML70ND6T is a 256K memory device which is designed to provide a compact solution for a variety of applications in both industrial and automotive sectors. It features a one-time programmable core, which is suitable for battery backup and mixed-mode operation applications. This memory device can be used for various types of applications from data storage and programmable logic to communication systems. It is also suitable for use in the automotive industry for navigation and other similar applications.</p> <p>The memory device is composed of two main components: the control unit and the memory array. The control unit contains the circuit components responsible for controlling the memory device. It also contains the electrical/electronic components required to support the various types of operations. The memory array is composed of a number of memory cells, which are used to store the data. The data contained in the memory cells can be accessed by the control unit through the address bus connection.</p><p>The operation of the memory device is based on a linear-address space. This means that the memory device can be accessed sequentially starting from any physical address. The address bus connection is used for accessing different memory locations within the array. The control unit can also perform a number of operations such as data retrieval and data write operations.</p><p>The M68AW256ML70ND6T is designed in such a way that it can be operated in a "read-only" or "read-write" mode. The "read-only" mode is used for memory storage applications, while the "read-write" mode is used for programmable logic and communication systems.</p><p>The memory device is also designed to be able to operate in a number of different clock frequencies, which can be adjusted according to the needs of the application. This allows the device to operate in a wider range of applications, from low to high-speed operations.</p><p>The M68AW256ML70ND6T is an extremely reliable and robust memory device, which is ideal for a variety of applications in both industrial and automotive sectors. Its ease of use and wide range of features make it a perfect choice for all sorts of applications, from data storage to programmable logic and communication systems.</p>

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