M68AW512ML70ND6

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	8Mb (512K x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II
Base Part Number:	M68AW512M

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Introduction

Memory is a very important component in modern digital systems. It is used to store instructions of computer program and data used in execution process. M68AW512ML70ND6 is an important memory device which is used in different types of applications. In this article, the application field and working principle of M68AW512ML70ND6 will be discussed in detail.

Application Field of M68AW512ML70ND6

The M68AW512ML70ND6 is a low-power static random access memory (SRAM) device. It is widely used in various types of applications such as data logging, embedded system designs, automotive engine control systems and communication systems. The M68AW512ML70ND6 is an ideal memory device for embedded system designs due to its low power technology and enhanced durability. It is also suitable for use in applications which require continuous access to large amounts of data.

Working Principle of M68AW512ML70ND6

The working principle of the M68AW512ML70ND6 is based on static RAM technology. This technology allows the device to store the data and instructions it needs to perform operations. The data is stored on capacitors and the memory cells are connected to one another to form a memory array. When power is applied, the capacitors charge up and the data is stored. To read from the memory, the data is charged from the capacitors in order to be accessed. To write data to the memory, the data is transferred from the data lines to the memory cells. The M68AW512ML70ND6 is a high performance static RAM device which works with a high frequency of up to 120MHz. It is also very power efficient and is designed to operate with very little power consumption. The device features a wide range of features such as low power dissipation, fast access time, low noise operation and wide temperature range.

Conclusion

The M68AW512ML70ND6 is a powerful static RAM device which is suitable for use in a variety of applications. The device offers high performance, low power consumption and fast access time. It is ideal for use in applications which require large amounts of continuous data access. The working principle of the M68AW512ML70ND6 is based on static RAM technology and it is designed to work with a high frequency of up to 120MHz.

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