M93C56-WBN6P

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	2Kb (256 x 8, 128 x 16)
Clock Frequency:	2MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	2.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Through Hole
Package / Case:	8-DIP (0.300", 7.62mm)
Supplier Device Package:	8-PDIP
Base Part Number:	M93C56

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<p>Memory is an integral part of any computer system. It is essential in providing efficient and reliable access to data and instructions. The M93C56-WBN6P is a type of memory integrated circuit (IC) specifically designed for non-volatile storage. It is widely used in embedded systems, such as industrial automation, factory automation, medical equipment, industrial control, intelligent transponders, etc.</p><p>The M93C56-WBN6P IC provides an excellent and reliable way to store data by employing ferroelectric memory (FeRAM), which is a form of non-volatile random access memory (NVRAM) technology. This IC can hold up to 64 bytes and has an access time of 70 nanoseconds. It has a wide voltage range of 1.8 – 5.5V, making it ideal for battery-operated applications. The data is organized into nine 8-bit words and can be accessed through a 26-pin, dual in-line package (DIP).</p><p>The M93C56-WBN6P has many features that make it suitable for use in embedded systems. The nonvolatile FeRAM technology provides high-security, reliable, and fast data storage when compared to other nonvolatile memory technologies. The device also features immunity to noise and is compatible with a wide variety of microcontrollers. The M93C56-WBN6P comes with an external write protect line, allowing the user to disable writing to the device and protect it from accidental erasure or corruption.</p><p>The working principle of the M93C56-WBN6P IC is based on the use of ferroelectric material, which is a type of material that can detect a magnetic field. This material is electrically charged so that it has two states, either a high or low charge. These two states can be used to represent the two different states in binary data.</p><p>When a write command is sent to the M93C56-WBN6P, the ferroelectric material changes its charge state. When a read command is sent to the device, the ferroelectric material detects the current magnetic field and sends back the corresponding binary state. This process allows the device to store and recall up to 64 bytes of data.</p><p>In conclusion, the M93C56-WBN6P is a highly flexible, secure, and reliable integrated circuit for non-volatile storage. Its versatile features make it ideal for use in embedded systems that require a wide range of voltage supply, fast data access, and noise immunity. The device’s working principle is based on ferroelectric material which makes it suitable for applications requiring higher security and reliability.</p>

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