M95256-DFMC6TG Allicdata Electronics

M95256-DFMC6TG Integrated Circuits (ICs)

Allicdata Part #:

497-15775-2-ND

Manufacturer Part#:

M95256-DFMC6TG

Price: $ 0.41
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EEPROM 256K SPI 8UFDFPN
More Detail: EEPROM Memory IC 256Kb (32K x 8) SPI 20MHz 8-UFDF...
DataSheet: M95256-DFMC6TG datasheetM95256-DFMC6TG Datasheet/PDF
Quantity: 5000
5000 +: $ 0.36346
10000 +: $ 0.36102
15000 +: $ 0.35147
Stock 5000Can Ship Immediately
$ 0.41
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UFDFPN (2x3)
Base Part Number: M95256
Description

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Founded in 1970, M95256-DFMC6TG is a chip-level nonvolatile memory device used in various embedded products and products requiring high speed, low power consumption, and wide temperature range performance. Its application field and working principle are discussed in this article.

The M95256-DFMC6TG has a broad range of application fields. It is mainly used for storage and on-chip programming of products that require low power consumption, such as microcontrollers, embedded system, consumer electronics, automotive products, medical devices, telecommunication systems, etc. As a low power memory device, the M95256-DFMC6TG can further reduce power consumption in single power supply systems without any additional components. It also has various modes and technology options to meet the specific performance requirements of different applications.

The M95256-DFMC6TG is a nonvolatile memory device featuring high reliability and performance, wide temperature range up to -40℃ to +105℃. It incorporates an advanced four-level cell (FC) structure with an optimized design, enabling high-density, reliable, and effective programming and erase. Program and erase functions allow the storage of vast amounts of user data. This capability makes it a perfect choice for application in fields such as automation, medical and consumer electronics, etc.

The M95256-DFMC6TG utilizes the asynchronous page write protocol to provide faster programming speeds. The asynchronous page write protocol ensures that the most significant bits of data are written first, quickly programming the chip and allowing for easy external memory expansion in applications where speed and memory are both needed.

The working principle of the M95256-DFMC6TG is relatively straightforward. The chip’s internal cells are partitioned into four-level cells, giving it a higher density when compared to other nonvolatile memory chips. An essential feature of this chip is the ability to detect logical inversions and reduce program errors while the chip is being programmed. The chip also supports on-the-fly programming, configuring the write sequence of each memory to allow programming while other memory cells simultaneously retain their content.

An advantage of the chip is its high erase speeds, which enable the user to quickly erase the memory when needed. The chip also helps reduce power consumption with its low power and current draw features. Furthermore, the chip has a range of package options and can be used in applications such as embedded systems, consumer electronics, and automotive products.

In summary, the M95256-DFMC6TG is a versatile and efficient nonvolatile memory device that can be used for a wide variety of applications. The chip runs on low power, has a wide temperature range, and features fast erase and high density memory storage. This makes it ideal for application in fields that require low power and reliable storage, such as consumer electronics, medical devices, and automotive products. The chip’s asynchronous page write protocol further adds to its efficiency and speed while the four-level cell structure helps reduce program errors.

The specific data is subject to PDF, and the above content is for reference

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