M95256-WMN6TP Integrated Circuits (ICs) |
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Allicdata Part #: | 497-8691-2-ND |
Manufacturer Part#: |
M95256-WMN6TP |
Price: | $ 0.33 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC EEPROM 256K SPI 20MHZ 8SO |
More Detail: | EEPROM Memory IC 256Kb (32K x 8) SPI 20MHz 8-SO |
DataSheet: | M95256-WMN6TP Datasheet/PDF |
Quantity: | 7500 |
2500 +: | $ 0.29339 |
5000 +: | $ 0.27505 |
12500 +: | $ 0.26597 |
25000 +: | $ 0.25005 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 256Kb (32K x 8) |
Clock Frequency: | 20MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | M95256 |
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Memory
M95256-WMN6TP is a Ferroelectric Random Access Memory (FRAM) device integrated on a serial interface that allows access to memory locations through the SPI protocol.
Application Field
M95256-WMN6TP\'s typical applications include the following:
- Data logging
- Configuration data storage
- Stationery device memory
- Wireless communications
- Motor control
- Automotive
- Industrial applications
- Medical instrumentation
Working Principle
The fundamental reason that makes M95256-WMN6TP FRAM devices so attractive to system designers is the manner in which data is stored. It is a non-volatile memory technology that uses a ferroelectric material to store information. This material is essentially a crystal with the unique attribute that holds its polarity even when power has been removed from the memory.
The ferroelectric material acts as a capacitor. When the applied voltage polarizes the crystal in one direction, the capacitor stores a “1," and when the voltage polarizes the material in the other direction, the capacitor stores a “0.” The FRAM memory array is organized into blocks of memory, each of which is made up of 8 independent memory cells. Each of the 8 cells is built from one bit of data along with 1 bit of parity. Writing to the memory requires the data to be passed to the internal write circuit, which will divide the data into individual bits and store it into memory.
The internal write circuit also contains an error detection circuit that compares the data to the internal parity bits to ensure error-free data. In addition, the write circuit will validate the programming and erase/write operations to make sure the operation is successful.
The specific data is subject to PDF, and the above content is for reference
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