M95256-WMN6TP Allicdata Electronics

M95256-WMN6TP Integrated Circuits (ICs)

Allicdata Part #:

497-8691-2-ND

Manufacturer Part#:

M95256-WMN6TP

Price: $ 0.33
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EEPROM 256K SPI 20MHZ 8SO
More Detail: EEPROM Memory IC 256Kb (32K x 8) SPI 20MHz 8-SO
DataSheet: M95256-WMN6TP datasheetM95256-WMN6TP Datasheet/PDF
Quantity: 7500
2500 +: $ 0.29339
5000 +: $ 0.27505
12500 +: $ 0.26597
25000 +: $ 0.25005
Stock 7500Can Ship Immediately
$ 0.33
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: M95256
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory

M95256-WMN6TP is a Ferroelectric Random Access Memory (FRAM) device integrated on a serial interface that allows access to memory locations through the SPI protocol.

Application Field

M95256-WMN6TP\'s typical applications include the following:

  • Data logging
  • Configuration data storage
  • Stationery device memory
  • Wireless communications
  • Motor control
  • Automotive
  • Industrial applications
  • Medical instrumentation

Working Principle

The fundamental reason that makes M95256-WMN6TP FRAM devices so attractive to system designers is the manner in which data is stored. It is a non-volatile memory technology that uses a ferroelectric material to store information. This material is essentially a crystal with the unique attribute that holds its polarity even when power has been removed from the memory.

The ferroelectric material acts as a capacitor. When the applied voltage polarizes the crystal in one direction, the capacitor stores a “1," and when the voltage polarizes the material in the other direction, the capacitor stores a “0.” The FRAM memory array is organized into blocks of memory, each of which is made up of 8 independent memory cells. Each of the 8 cells is built from one bit of data along with 1 bit of parity. Writing to the memory requires the data to be passed to the internal write circuit, which will divide the data into individual bits and store it into memory.

The internal write circuit also contains an error detection circuit that compares the data to the internal parity bits to ensure error-free data. In addition, the write circuit will validate the programming and erase/write operations to make sure the operation is successful.

The specific data is subject to PDF, and the above content is for reference

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