M95640-WMN6T Allicdata Electronics

M95640-WMN6T Integrated Circuits (ICs)

Allicdata Part #:

497-1947-2-ND

Manufacturer Part#:

M95640-WMN6T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EEPROM 64K SPI 20MHZ 8SO
More Detail: EEPROM Memory IC 64Kb (8K x 8) SPI 20MHz 8-SO
DataSheet: M95640-WMN6T datasheetM95640-WMN6T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: M95640
Description

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Memory is an important component in any electronic device. It helps store data and application state, enabling the device to access or use that information at a later point of time. Memory chips have different sizes and capacity and vary depending on the application or device for which it is being used. M95640-WMN6T is one such type of memory chip.

M95640-WMN6T is a serial, electrically erasable programmable read-only memory (EEPROM) chip. It is a non-volatile, rewritable memory that is used in many different applications and devices. It is manufactured by STmicroelectronics and has a capacity of 8 Kbits, or 1024 bytes. It is a very efficient chip that can be easily programmed and erased.

The application of M95640-WMN6T can be seen in a wide range of products and devices. These include personal digital assistants (PDA), mobile phones, embedded systems, and other intelligent and programmable equipment. It can also be used in automotive systems, home appliances, and industrial applications that require memory chips with large capacity.

The working principle of the M95640-WMN6T is based on a multi-level memory cell array. Each memory cell consists of two transistors (M1 and M2) and a resistance element (R1). The transistor M1 acts as the selection switch and is connected to the row or address line. The transistor M2 acts as the write switch and is connected to the column or data line. When a voltage is applied to the row address line, the transistor M1 is activated and the data is written to that address. The resistor R1 ensures the data written is stored in its original form.

The M95640-WMN6T memory chip is programmed through a serial programming interface. It can be erased and reprogrammed repeatedly even after it has been installed in the target device. It is also an economical choice, as it consumes very low power and offers a faster programming and read cycle rate. Thus, it makes the device more efficient and reliable.

Overall, the M95640-WMN6T memory chip is an efficient non-volatile memory solution for a wide range of applications. It has a high capacity, low power consumption, fast programming and read cycle rate, and flexibility to be programmed even after it has been installed in the device. Thus, it is an ideal choice for many applications that require reliable and efficient memory solutions.

The specific data is subject to PDF, and the above content is for reference

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