
MA2C85800E Discrete Semiconductor Products |
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Allicdata Part #: | MA2C85800ETB-ND |
Manufacturer Part#: |
MA2C85800E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | DIODE BAND SWITCHING 35V DO-34 |
More Detail: | RF Diode Standard - Single 35V 100mA DO34-A1 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard - Single |
Voltage - Peak Reverse (Max): | 35V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 1.2pF @ 6V, 1MHz |
Resistance @ If, F: | 980 mOhm @ 2mA, 100MHz |
Operating Temperature: | -25°C ~ 85°C (TA) |
Package / Case: | DO-204AG, DO-34, Axial |
Supplier Device Package: | DO34-A1 |
Base Part Number: | MA2C858 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MA2C85800E is a high-power, low-cost, advanced microwave amplifier. It requires only a single DC voltage source, low voltage bias and optional heat sink to operate. The MA2C85800E is optimised for use in telecommunication applications and can be used in virtually any microwave application. The gains of the MA2C85800E are excellent, with easy-to-use input and output ports for a wide variety of implementations.
The MA2C85800E is designed for applications in wireless and wireless communication, aviation and defence, microwave studios, industrial, automotive and scientific purposes. It is suitable for both distributed power amplifiers and linear base station systems.
The MA2C85800E is a downstream RF amplifier featuring low voltage biased GaN device technology. It provides excellent gain, outstanding linearity and efficiency with a single positive voltage supply. The MA2C85800E utilizes EAPT open drain drivers for improved supply voltages and the newest advanced devices. It also features a high-gain dynamic range, allowing operation in the presence of significant AM components in the input signal.
The MA2C85800E delivers outstanding RF performance, with wide bandwidth and an operating frequency range of 10 kHz to 2.7 MHz. Output power is highly efficient, and the output can easily be modified to accommodate different power levels. The MA2C85800E also features an AC coupled, high impedance input port and a DC supply voltage monitoring pin to ensure adequate power supply to the device.
The working principle of the MA2C85800E is based on the principle of modulation. The modulation type can vary according to application demands. It depends on the type of device utilized and the signal required. Generally, the device is either modulated directly or indirectly to transfer or retrieve desired signal or data. The modulation technique used depends on signal to be transmitted or the signal to be received. For example, if the signal is audio signal then a frequency shifting scheme can be used such as frequency-division multiplexing (FM). Alternatively, amplitude modulation (AM) may be used to transfer high-frequency signal, such as digital data. The MA2C85800E supports modulation types such as quadrature phase shift keying (QPSK), binary phase shift keying (BPSK), minimum shift keying (MSK) and amplitude shift keying (ASK).
The MA2C85800E also features some built-in capabilities to simplify implementation. It utilizes a power detect pin for remote monitoring of the supply voltage and the output current, and an integrated control circuit to reduce amplifier fluctuations. Additionally, automatic gain control (AGC) can be implemented to maintain the gain of the amplifier within a specified range.
The MA2C85800E is an excellent choice for high power and excellent linearity in applications requiring a broad bandwidth. Its range of features and wide range of operation make it a perfect choice for a range of applications, from single-ended linear base stations to distributed power amplifiers.
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