MA2J1160GL Allicdata Electronics

MA2J1160GL Discrete Semiconductor Products

Allicdata Part #:

MA2J1160GLTR-ND

Manufacturer Part#:

MA2J1160GL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: DIODE GEN PURP 40V 100MA SMINI2
More Detail: Diode Standard 40V 100mA Surface Mount SMini2-F3
DataSheet: MA2J1160GL datasheetMA2J1160GL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 10nA @ 40V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SMini2-F3
Operating Temperature - Junction: 150°C (Max)
Base Part Number: MA2J116
Description

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Diodes are semiconductor devices used to control the flow of electric current. Rectifiers are diodes that convert an alternating current (AC) input into a unidirectional current (DC) output. Single diodes, such as MA2J1160GL, are used as a single component for rectification. MA2J1160GL is a Schottky diode with a rated voltage of 200V that is especially efficient in rectifying medium to high frequencies. It is widely used in a variety of electronic applications such as switching power supplies, electronic ballasts, DC-DC converters, etc.

The working principle of MA2J1160GL is similar to other diodes. A diode is essentially an electronic switch that allows current flow in one direction while blocking it in the opposite direction. The MA2J1160GL\'s most important component is a metal-semiconductor junction called a Schottky barrier. This junction is formed by applying a negative or positive voltage to a metal electrode which is in contact with a semiconductor material. When forward-biased, electrons flow from the metal to the semiconductor. Similarly, when reverse-biased, the metal-semiconductor junction acts as an insulator.

The MA2J1160GL\'s Schottky barrier offers its own unique advantages. Compared to conventional p-n junction diodes, Schottky diodes have less forward voltage drop and shorter reverse recovery times. Due to their extremely low forward voltage drop, they are ideal for high frequency applications. Additionally, their low recovery times make them excellent for switching applications. The MA2J1160GL is thus an ideal choice for applications requiring these features such as servo controllers, UPS systems, and telecom equipment.

When looking for a diode for rectification applications, the MA2J1160GL should be seriously considered. Its Schottky barrier design allows it to be used in high frequency applications while also providing a low voltage drop. Additionally, its low reverse recovery time makes it an ideal choice for switching applications. With its many advantages, the MA2J1160GL is arguably one of the best single diodes available on the market today.

The specific data is subject to PDF, and the above content is for reference

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