Allicdata Part #: | 1465-1017-ND |
Manufacturer Part#: |
MA4AGFCP910 |
Price: | $ 3.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | ALGAAS PIN DIODE FLIP CHIP |
More Detail: | RF Diode PIN - Single 75V 50mW 2-FlipChip |
DataSheet: | MA4AGFCP910 Datasheet/PDF |
Quantity: | 390 |
100 +: | $ 3.33598 |
300 +: | $ 3.01050 |
500 +: | $ 2.70130 |
1000 +: | $ 2.27821 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 75V |
Capacitance @ Vr, F: | 0.021pF @ 10V, 1MHz |
Resistance @ If, F: | 6 Ohm @ 10mA, 10GHz |
Power Dissipation (Max): | 50mW |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | 2-FlipChip |
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MA4AGFCP910 Application Field and Working Principle
The MA4AGFCP910 diode is a popular radio frequency (RF) device used in modern electronic circuits. It is used to provide signal conditioning, switching, and power transfer in a variety of applications. The MA4AGFCP910 is a miniature epoxy-encapsulated RF diode designed for a variety of high-frequency applications, such as wireless communications, radio and television broadcast systems, and digital logic circuits. This device is capable of providing low-leakage current and high-frequency performance, and is compatible with many different types of circuit components and other devices.
The MA4AGFCP910 diode is a Schottky barrier type of device, which means that it employs a metal-semiconductor junction to effectively rectify AC power. The Schottky effect produces a rectifying junction with fast switching speeds and low voltage drop other geometries, such as PIN diodes. The MA4AGFCP910 features a very low junction capacitance and low forward voltage drop. This makes it particularly suitable for high-frequency applications, such as those requiring high frequency responses or switching of signals with frequency content greater than 8 GHz.
The most common application of the MA4AGFCP910 is to provide protection against reverse voltages, or to provide voltage bias for RF applications. The device gives excellent protection against reverse voltages, as it exhibits low reverse leakage current, and its reverse-leakage is linearly proportional to the applied reverse bias voltage. The diode is also used in the modulation of radio signals, in order to reduce their amplitude, change their frequency response, or reduce their phase distortion. Finally, the device is used to prevent counter modulation of signals, by blocking or restricting selected frequency ranges from being affected by other signals in the same frequency range.
The MA4AGFCP910 is also an ideal solution for signal conditioning, as it is able to provide superior frequency response characteristics in a wide range of different applications. Its operating frequency range is from DC to 8 GHz, which gives it the ability to handle signals at high frequencies. The device is also able to reject signals at very low frequencies, providing improved noise rejection capability. The low junction capacitance of the MA4AGFCP910 also enables it to perform better when switching signals with high frequency content, thus providing increased selectivity and improved frequency response.
The MA4AGFCP910 is a hugely important component in the design and implementation of modern electronics. It is able to provide a wide range of benefits, from its excellent frequency response, to its superior protection capabilities, making it an ideal choice for engineers in a variety of applications. As it is a very small device it is highly cost effective, and its availability in a variety of different sizes and packages means that it can easily be incorporated into a range of different circuit configurations.
The specific data is subject to PDF, and the above content is for reference
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