Allicdata Part #: | 1465-1502-ND |
Manufacturer Part#: |
MAMG-001214-090PSM |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANSISTOR GAN 90W |
More Detail: | RF Amplifier IC Radar 960MHz ~ 1.215GHz Module |
DataSheet: | MAMG-001214-090PSM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Frequency: | 960MHz ~ 1.215GHz |
P1dB: | -- |
Gain: | 31dB |
Noise Figure: | -- |
RF Type: | Radar |
Voltage - Supply: | 50V |
Current - Supply: | 300mA |
Test Frequency: | 1.215GHz |
Package / Case: | 9-SMD Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF Amplifiers are commonly used in many areas of modern electronics. The highly resilient and flexible properties of these amplifiers make them well suited for a variety of applications. One of the most useful and versatile RF Amplifiers is the MAMG-001214-090PSM. This article will discuss the application field and working principle of this amplifier.
The MAMG-001214-090PSM is a broadband medium power amplifier designed for applications such as mobile phone base stations. It operates from the 0.6 to 2.5 GHz frequency range and delivers a typical power gain of 16 dB when powered by +13 dBm input. It is a GaAs FET amplifier with a high linearity and low-noise performance. With its integrated temperature compensation and drain bias circuitry, the MAMG-001214-090PSM ensures reliable operation and long-term performance stability.
The MAMG-001214-090PSM is an ideal solution for amplifying wireless signals up to 2.5 GHz and is particularly well suited for base-station applications. It supports a range of 2G, 3G, and 4G systems, including GSM, CDMA, UMTS, and LTE. This wide bandwidth and superior performance make the MAMG-001214-090PSM an ideal solution for both indoor and outdoor applications.
The MAMG-001214-090PSM\'s working principle is based on using an FET (Field Effect Transistor) as the active device. FETs are well-suited for broadband amplification because they have a high input impedance, so they can perform over a wide frequency range. The FET is used in a common source amplifier configuration with an active load. In this configuration, the FET is connected in series to form a voltage divider, which provides the signal gain. The load is connected in parallel with the FET and functions as an impedance matching network. This arrangement reduces the signal loss between the FET and the load, thus improving the overall power efficiency.
In addition to the common source amplifier configuration, the MAMG-001214-090PSM also features an integrated drain bias network. This network regulates the FET\'s bias voltage, which is necessary for proper operation of the amplifier. The drain bias network also reduces the noise generated by the FET, thus improving the amplifier\'s overall performance.
The MAMG-001214-090PSM is a highly efficient and reliable amplifier for a variety of radio frequency applications. With its wide bandwidth and excellent linearity, the MAMG-001214-090PSM can be used in a wide variety of applications, including mobile phone base stations and other wireless applications. With its integrated temperature compensation and drain bias circuitry, the MAMG-001214-090PSM ensures reliable operation and long-term performance stability.
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