MAPLAD15KP8.5CAE3 Allicdata Electronics
Allicdata Part #:

1086-4791-ND

Manufacturer Part#:

MAPLAD15KP8.5CAE3

Price: $ 28.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 8.5V 14.4V PLAD
More Detail: N/A
DataSheet: MAPLAD15KP8.5CAE3 datasheetMAPLAD15KP8.5CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 25.45170
Stock 1000Can Ship Immediately
$ 28
Specifications
Voltage - Clamping (Max) @ Ipp: 14.4V
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Current - Peak Pulse (10/1000µs): 1041A (1.041kA)
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 9.44V
Voltage - Reverse Standoff (Typ): 8.5V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MAPLAD15KP8.5CAE3 is a special type of TVS (Transient Voltage Suppressor) diodes that is designed for the high-speed and low-cost protection of sensitive electronics applications. The unique feature of this type of diode is its high switching capability, which provides a maximum surge current up to 4kA and a breakdown voltage of 500 V. This diode is typically used in DC/DC converters, AC/DC power supplies, DSPs, FPGAs, microprocessors, and systems monitors. It is ideal for applications requiring fast response times to transient events.

A TVS diode typically has two terminals, either in a single or a dual configuration. The anode terminal is connected to the voltage source, and the cathode terminal is connected to the load. When a voltage surge occurs, the diode starts to conduct and dissipates the surge energy in the form of heat, thus preventing any damage to the connected device. The exact working principle of a MAPLAD15KP8.5CAE3 diode is dependent on the type of technology used.

The MAPLAD15KP8.5CAE3 diodes operate using avalanche breakdown technology. This technology employs a silicon wafer that is reverse biased in order to generate a high voltage across it. When the reverse bias is applied, the band gap energy (which is a property of the material) is reduced and the relief current begins to flow. This current creates an avalanche breakdown of the entire diode, thus causing the current to be dissipated in the form of heat. This avalanche breakdown technology is fast and very reliable, allowing for the device to respond quickly to transient voltages.

MAPLAD15KP8.5CAE3s are also equipped with special clamping mechanisms such as the Zener diode and a parasitic capacitance. The parasitic capacitance is formed by the parasitic elements at the junction layer during the reverse biasing process. This parasitic capacitance is able to absorb the high-frequency voltage surges to prevent false triggering on the diode. The Zener diode is used to reduce the holding voltage of the diode after conduction. This reduces the possibility of the device entering a false-state due to extended voltage exposures.

The MAPLAD15KP8.5CAE3 diodes provide very high surge current levels, fast response, high tolerance, and excellent reliability. These features make the diode a great choice for a wide variety of applications, such as DC/DC converters, AC/DC power supplies, DSPs, FPGAs, microprocessors, and systems monitors. The device is able to withstand high voltage surges without the need of additional external components, thus providing a cost-effective solution for applications requiring fast response times to transient events.

The specific data is subject to PDF, and the above content is for reference

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