Allicdata Part #: | 1086-4911-ND |
Manufacturer Part#: |
MAPLAD30KP36CAE3 |
Price: | $ 39.68 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 36V 58.1V PLAD |
More Detail: | N/A |
DataSheet: | MAPLAD30KP36CAE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 36.07480 |
Specifications
Voltage - Clamping (Max) @ Ipp: | 58.1V |
Supplier Device Package: | PLAD |
Package / Case: | Nonstandard SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 30000W (30kW) |
Current - Peak Pulse (10/1000µs): | 516A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 40V |
Voltage - Reverse Standoff (Typ): | 36V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Description
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TVS - Diodes
MAPLAD30KP36CAE3 application field and working principle
The MAPLAD30KP36CAE3 is a Thyristor Transient Voltage Suppressor (TVS) diode designed for use in the electrical protection of electronic components. It is a unidirectional device that is designed to suppress voltage transients of various types. The MAPLAD30KP36CAE3 is mainly used to protect iGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) from voltage transients caused by electrostatic discharge (ESD) and electromagnetic interference (EMI). It is also suitable for use as a lightning protection device for sensitive electrical components.The MAPLAD30KP36CAE3 utilizes a thyristor structure combined with voltage-dependent capacitance and avalanche voltage breakdown characteristics. This results in a unique protection device that provides high reliability and low power dissipation. The device also has an integrated 15V zener breakdown voltage which is used to protect sensitive components from over-voltage conditions.In operation, the MAPLAD30KP36CAE3 is subjected to a transient over-voltage condition. When this voltage reaches the avalanche voltage of the device, the thyristor structure is triggered, resulting in a surge current that quickly dissipates the transient voltage and limits the amount of stress the protected components are subjected to. The MAPLAD30KP36CAE3 is designed to handle repetitive transients and transient surge pulses of up to 8 kV. It also has a very low internal capacitance, which results in a high dV/dt that allows the device to react quickly to transient voltage surges. This combination of features makes it ideal for use in applications such as motor control systems, industrial systems, domestic appliances, power distribution systems and automotive systems.In summary, the MAPLAD30KP36CAE3 is an excellent example of a TVS diode used to protect electrical components from transient events. It is a unidirectional device that utilizes a combination of thyristor structure, voltage-dependent capacitance and avalanche breakdown characteristics to provide robust protection. The device is especially suitable for protecting components from ESD and EMI transients.The specific data is subject to PDF, and the above content is for reference
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