MASMBJ12CA Circuit Protection |
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| Allicdata Part #: | 1086-5460-ND |
| Manufacturer Part#: |
MASMBJ12CA |
| Price: | $ 4.24 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 12V 19.9V DO214AA |
| More Detail: | N/A |
| DataSheet: | MASMBJ12CA Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 167 +: | $ 3.84617 |
| Voltage - Clamping (Max) @ Ipp: | 19.9V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 30.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 13.3V |
| Voltage - Reverse Standoff (Typ): | 12V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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The type MASMBJ12CA device is an example of uni-directional TVS - Diodes, whose role is to respond in a fraction of microsecond when a transient voltage is detected on the circuitry, and limit the consequent excess voltage. This particular device – like other TVS - Diodes, consist of a specially designed PN junction, usually formed sourcing the silicon, which has the ability to interact differently with high energy transient. It mainly used for protection purposes in integrated circuits and other electronic components, particularly in high-speed data-lines.
The type MASMBJ12CA is a surface mount device with a uni-directional configuration, suitable to help protecting sensitive circuits against high energy transients caused by electrostatic discharge, lightening discharges, inductive switching and other sources. It can withstand up to 12A of pulse working current.
The general working principle of a TVS - Diode, including the type MASMBJ12CA, is that it should have a lower threshold in comparison to the specific breakdown voltage value of the device, lower than the breakdown voltage of the circuit, allowing a small current to flow before the PN junction is opening. Differing the voltage over the breakdown voltage, the PN junction is opening and helping to protect the circuit against the greater voltage surge, whose value should be compatible with the specified breakdown voltage of the device.
In practical applications, the TVS - Diode, including the MASMBJ12CA, should be applied to the circuit such that the positive side of the device is connected to the highest voltage point of the circuit. This kind of connection allows an operation mode where the device can switch to symmetrical breakdown mode when the applied voltage surpasses the specified breakdown voltage of the TVS - Diode.
In its symmetrical breakdown mode, the MASMBJ12CA device is able to absorb voltage transients, protecting the circuit from the respective excess current and subsequent damage. As the transient goes, the device dissipates most of the respective energy in the form of heat, in such a way that when the pulse expiration occurs, the device return to its normal operation state automatically. Furthermore, the MASMBJ12CA can help reducing reflected voltage and ringing since it has between 25Ω to 45Ω of internal chip impedance.
The response time of the MASMBJ12CA is typically shorter than 1ns, in part that ensures it responds accurately and quickly to voltage transients, helping to safer the circuitry from any harmful faulty state. Its operating temperature ranges between -55°C and 150°C, allowing it to be employed in many different industrial applications that involve extreme temperatures.
Although the MASMBJ12CA device has many desirable properties and features, It is highly recommended that a 10V zener diode be glued to the circuit in cases where the applied voltage may surpass the breakdown voltage level, otherwise there can be a risk that the device fails due to over-surge.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| MASMBJ5.0AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 5V 9.2V DO214AA |
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| MASMBJ70CA | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 70V 113V DO214A... |
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| MASMLJ5.0A/TR | Microsemi Co... | 5.66 $ | 1000 | HI REL TVS |
| MASMLJ14AE3 | Microsemi Co... | 5.78 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
| MASMLJ7.0CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 7V 12V DO214AB |
| MASMLG170CA | Microsemi Co... | 6.39 $ | 1000 | TVS DIODE 170V 275V DO215... |
| MASM-14R-15-20 | Littelfuse I... | 0.53 $ | 1000 | SWITCH REED SPST-NO 350MA... |
| MASMBJ160AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 160V 259V DO214... |
| MASMBG10CAE3 | Microsemi Co... | 4.0 $ | 1000 | TVS DIODE 10V 17V DO215AA |
| MASMBG85CAE3 | Microsemi Co... | 4.0 $ | 1000 | TVS DIODE 85V 137V DO215A... |
| MASMBJ36CA/TR | Microsemi Co... | 4.17 $ | 1000 | HI REL TVS |
| MASMCJ110AE3 | Microsemi Co... | 4.5 $ | 1000 | TVS DIODE 110V 177V DO214... |
| MASMCJ70AE3 | Microsemi Co... | 4.5 $ | 1000 | TVS DIODE 70V 113V DO214A... |
| MASMLJ100AE3 | Microsemi Co... | 5.78 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MASMLJ51CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MASMLJ8.0CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MASMLJ8.5CA | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MASMCJLCE24A | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
| MASMCJLCE30AE3 | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMCGLCE11A | Microsemi Co... | 6.47 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MASMCGLCE16AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MASMCGLCE54AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
| MASMBJ30A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMBJ64AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 64V 103V DO214A... |
| MASMBJ8.5AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MASMBG120AE3 | Microsemi Co... | 4.31 $ | 1000 | TVS DIODE 120V 193V DO215... |
| MASMCJ22CAE3 | Microsemi Co... | 4.91 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
| MASMLG7.0AE3 | Microsemi Co... | 5.96 $ | 1000 | TVS DIODE 7V 12V DO215AB |
| MASMLG160CAE3 | Microsemi Co... | 6.39 $ | 1000 | TVS DIODE 160V 259V DO215... |
| MASMCGLCE15A | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
| MASMBJ8.0CA | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MASMBJ51CAE3 | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MASMBG170A | Microsemi Co... | 4.31 $ | 1000 | TVS DIODE 170V 275V DO215... |
| MASMCG78A | Microsemi Co... | 4.67 $ | 1000 | TVS DIODE 78V 126V DO215A... |
| MASMCJ17CAE3 | Microsemi Co... | 4.91 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
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MASMBJ12CA Datasheet/PDF