MASMBJ160AE3 Allicdata Electronics
Allicdata Part #:

1086-5483-ND

Manufacturer Part#:

MASMBJ160AE3

Price: $ 3.93
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 160V 259V DO214AA
More Detail: N/A
DataSheet: MASMBJ160AE3 datasheetMASMBJ160AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
180 +: $ 3.56409
Stock 1000Can Ship Immediately
$ 3.93
Specifications
Voltage - Clamping (Max) @ Ipp: 259V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 2.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 178V
Voltage - Reverse Standoff (Typ): 160V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are a type of device that are used to provide protection from transient voltage surges. It is an important feature of many electronic circuits, as it ensures that any sudden overvoltage is quickly grounded before it can cause any damage to the sensitive components within the circuitry. The MASMBJ160AE3 is a widely used TVS diode that is used to protect against 18-25 kV ESD (electro-static discharge) pulses, up to 8 kA peak. It is especially popular in applications where fast switching times and low impedance are essential.

The MASMBJ160AE3 is rated to work with voltage of 14 Vdc / 5.2Vdc and peak output current of 8.0 kA. It can handle power dissipation of 1.6 W and has a standoff voltage of 14-25 kV. It has a breakdown voltage of 40 V, and a peak pulse power of 160 W. The device is encased in a 1.6 x 0.8 mm TDFN SMT package that is rated for operation between 0°C and 85°C.

The basic design of the MASMBJ160AE3 consists of an asymmetric silicon avalanche diode and a metal oxide varistor (MOV). The asymmetric diode works to quickly limit the voltage across the device, while the MOV works to absorb any large voltage surges that occur before they can damage any other components in the circuit. The MOV and the diode are connected in series, so that the MOV can limit the amount of current that the diode can pass. This way, any over-voltage spikes are quickly grounded before they can cause any damage.

While the MASMBJ160AE3 is mostly used to protect against ESD pulses, it can also be used in other applications. It can be used to protect against overvoltage surges in a wide variety of electronic systems, from industrial motor drives to computer systems. It can also be used to protect against lightning strikes or any other sudden overvoltage incidents.

In summary, the MASMBJ160AE3 is a widely used TVS diode that is used to protect against 18-25 kV ESD pulses. It is rated to work with voltage of 14 Vdc/5.2Vdc and peak output current of 8.0 kA. It consists of an asymmetric silicon avalanche diode and metal oxide varistor that work in combination to quickly ground any over-voltage spikes before they can cause any damage. It can be used for a variety of applications, from industrial motor drives to computer systems.

The specific data is subject to PDF, and the above content is for reference

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