Allicdata Part #: | 1086-6501-ND |
Manufacturer Part#: |
MASMLJ51AE3 |
Price: | $ 5.78 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 51V 82.4V DO214AB |
More Detail: | N/A |
DataSheet: | MASMLJ51AE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
122 +: | $ 5.25642 |
Voltage - Clamping (Max) @ Ipp: | 82.4V |
Supplier Device Package: | DO-214AB |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 3000W (3kW) |
Current - Peak Pulse (10/1000µs): | 36.4A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 56.7V |
Voltage - Reverse Standoff (Typ): | 51V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS diodes (Transient Voltage Suppressor) are designed to protect circuits from damaging levels of voltage transients. The MASMLJ51AE3 is one of the most versatile and popular devices of its type. It offers a 50V break-down voltage and a 300W peak power dissipation. It is designed to protect against voltage surges of 5VDC to 41VDC.
The MASMLJ51AE3 is a unidirectional device that is intended to shunt high-energy voltage transients. It does this by clamping the voltage by diverting the current onto a low-impedance alternate path. The series or parallel combination of the two terminals then forms an efficient clipper circuit. The diode can also act as a surge protector, guarding against damaging voltage spikes.
The working principle of the MASMLJ51AE3 is based on its internal structure which consists of a Zener diode with a low current breakdown, a silicon avalanche diode, and a fast acting breakdown transistor. The Zener diode is responsible for activating the avalanche diode. Once the avalanche diode is triggered, the breakdown transistor rapidly shuts off the choking effect of the avalanche diode and thereby allowing the surge current to enter the circuit freely. The transistor then provides a low impedance shunt path for the surge current and protects the equipment from it.
This wide variety of applications makes the MASMLJ51AE3 the ideal device for a variety of uses ranging from automotive, aerospace and railway applications, to commercial and industrial electronics. The combination of low clamping voltage, high peak pulse power and low leakage current makes it an ideal choice for protecting a variety of electronic components from over-voltage transients. It can also be used to protect communication systems such as digital cameras, Data Acquisition and Control (DAC) systems, and various types of integrated circuits.
In addition to its ability to protect against voltage transients, the MASMLJ51AE3 has a number of advantages over other transient voltage suppression devices. It has a much broader operating temperature range compared to similar devices and can also handle higher surge current levels. Its easy-to-handle tape-and-reel packaging allows for efficient handling during installation.
The MASMLJ51AE3\'s wide range of features makes it ideal for transient voltage protection applications. Its 50V break-down voltage ensures protection for high-speed signal processing applications, while its high peak power dissipation makes it ideal for controlling voltage surges. Its low leakage current makes it suitable for protecting devices operating in harsh environmental conditions and its low thermal runaway makes it an excellent choice for protecting sensitive components.
In conclusion, the MASMLJ51AE3 is a versatile and highly effective transient voltage suppression device. It is suitable for a wide range of applications and offers the benefits of a low break-down voltage, a high peak-power dissipation and a low leakage current. Its packaging also allows for efficient handling during installation, making it an ideal device for protecting sensitive electronics from damaging voltage transients.
The specific data is subject to PDF, and the above content is for reference
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MASMBJ10AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MASMBJ110A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 110V 177V DO214... |
MASMBJ110AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 110V 177V DO214... |
MASMBJ11A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MASMBJ11AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MASMBJ120A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 120V 193V DO214... |
MASMBJ120AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 120V 193V DO214... |
MASMBJ12A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MASMBJ12AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MASMBJ130A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 130V 209V DO214... |
MASMBJ130AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 130V 209V DO214... |
MASMBJ13A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MASMBJ13AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MASMBJ14A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MASMBJ14AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MASMBJ150A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 150V 243V DO214... |
MASMBJ150AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 150V 243V DO214... |
MASMBJ15A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
MASMBJ15AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
MASMBJ160A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 160V 259V DO214... |
MASMBJ160AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 160V 259V DO214... |
MASMBJ16A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 16V 26V DO214AA |
MASMBJ16AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 16V 26V DO214AA |
MASMBJ170A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 170V 275V DO214... |
MASMBJ170AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 170V 275V DO214... |
MASMBJ17A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
MASMBJ17AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
MASMBJ18A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
MASMBJ18AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
MASMBJ20A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MASMBJ20AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MASMBJ22A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
MASMBJ22AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
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