MASMBJ36A

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MASMBJ36A, found in TVS - Diodes, is an application field mainly used for the protection of active components against electrostatic discharge (ESD). It is a silicon-based diode that is specifically designed with an exposure limit of 8kV, making it a commonly used component for protecting semiconductor components from sudden voltage changes, power surges, and other related hazardous conditions. It has both IEC 61000-4-2 Level 4 and IEC 61000-6-2 Level 2 certifications, so it is also suitable as an over voltage protection device.

The MASMBJ36A consists of four separate bonded elements and is available in five different packages. Its low static capacitance and clamping voltage make it a suitable choice for LED lighting applications. The breakdown voltage of MASMBJ36A differs slightly depending on the particular application. Generally speaking, it has a maximum breakdown voltage of 8.0V for sudden voltage changes, 6.5V for power surges and 4.0V for other related hazardous conditions.

The working principle of MASMBJ36A is based on the principle that when a reverse polarity voltage exceeds the reverse breakdown voltage of the diode, conduction takes place. This is known as reverse bias. When this happens, current is conducted through the diode junction and a highly localized electric field appears within the depletion region. This electric field acts to reduce the reverse breakdown voltage of the diode and breakdown occurs, allowing current to flow in the opposite direction.

The self-biased MASMBJ36A utilizes capacitance in order to self-adjust its breakdown voltage. As the reverse voltage is applied to the diode, its capacitance decreases. This decreased capacitance causes the conventional breakdown voltage of the diode to decrease thus minimizing the over voltage protection of the semiconductor components.

The MASMBJ36A also provides additional features for enhanced safety and reliability. For instance, it uses an over-current detection mechanism, which prevents current from exceeding the rated current levels even if the avalanche voltage of the diode is exceeded. This assists the MASMBJ36A in protecting against power surges and other hazardous conditions. Furthermore, the MASMBJ36A has a high surge absorption capacity due to its multiple junction capacitance, which can effectively suppress high-rate pulse energy up to 200W.

In conclusion, the MASMBJ36A is an application field mainly used for the protection of active components from ESD and other hazardous conditions associated with power surges. It has an exposure limit of 8kV and utilizes capacitance in order to self-adjust its breakdown voltage. It also has additional features such as over-current detection mechanism, and a high surge absorption capacity due to its multiple junction capacitance. All these properties make the MASMBJ36A an ideal choice for LED lighting applications.

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