| Allicdata Part #: | 1086-5570-ND |
| Manufacturer Part#: |
MASMBJ54CA |
| Price: | $ 4.24 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 54V 87.1V DO214AA |
| More Detail: | N/A |
| DataSheet: | MASMBJ54CA Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 167 +: | $ 3.84617 |
| Voltage - Clamping (Max) @ Ipp: | 87.1V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 6.9A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 60V |
| Voltage - Reverse Standoff (Typ): | 54V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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MASMBJ54CA TVS - Diodes are small,general purpose, bidirectional devices that provide electrostatic discharge (ESD) and/or electromagnetic interference (EMI) protection. This type of device features fast clamping and minimal leakage.
The MASMBJ54CA protects the following components: digital and communication data lines, power bus ports, and other components that require protection from static discharge or other high-power transient surges.
The MASMBJ54CA is part of the Schottky diode family and is composed of a silicon-based p-n junction diode. This type of device utilizes a Schottky barrier which both protects the device from reverse breakdown and also provides increased forward conduction speed. This in turn leads to faster response time to transients.
The MASMBJ54CA can be used to protect against ESD voltage greater than 4 kV and EMI/RFI greater than 1 GHzHz. These devices are designed to be used in applications that require low forward voltage drop (Vf) and low thermal resistance. The Vf of the MASMBJ54CA is between 0.3 and 0.7V and the thermal resistance is between 240 and 260.
The application field of the MASMBJ54CA is broad and includes automotive, consumer electronics, cellular, Ethernet, and other communication systems. With its low Vf and thermal resistance rating, this device provides cost effective protection from damaging Electrostatic Discharge (ESD) and/or Electromagnetic Interference (EMI).
In terms of its working principle, the MASMBJ54CA consists of a p-n junction diode that is connected internally, to provide protection against overvoltage transient events that can destroy electronic components. When the device is connected in- circuit, these transients will be diverted away from the component due to the Schottky barrier. This barrier also facilitates faster recovery from any overvoltage event.
In conclusion, the MASMBJ54CA is an effective solution for protecting sensitive electronic components from damaging transients. This device is versatile and can be used in a variety of applications, while providing fast response times and minimal leakage. In addition, the low forward voltage drop and thermal resistance of the MASMBJ54CA makes it an ideal choice for cost effective protection against ESD and EMI/RFI.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MASMLJ14AE3 | Microsemi Co... | 5.78 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
| MASMLJ7.0CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 7V 12V DO214AB |
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| MASMBJ160AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 160V 259V DO214... |
| MASMBG10CAE3 | Microsemi Co... | 4.0 $ | 1000 | TVS DIODE 10V 17V DO215AA |
| MASMBG85CAE3 | Microsemi Co... | 4.0 $ | 1000 | TVS DIODE 85V 137V DO215A... |
| MASMBJ36CA/TR | Microsemi Co... | 4.17 $ | 1000 | HI REL TVS |
| MASMCJ110AE3 | Microsemi Co... | 4.5 $ | 1000 | TVS DIODE 110V 177V DO214... |
| MASMCJ70AE3 | Microsemi Co... | 4.5 $ | 1000 | TVS DIODE 70V 113V DO214A... |
| MASMLJ100AE3 | Microsemi Co... | 5.78 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MASMLJ51CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MASMLJ8.0CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MASMLJ8.5CA | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MASMCJLCE24A | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
| MASMCJLCE30AE3 | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMCGLCE11A | Microsemi Co... | 6.47 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MASMCGLCE16AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MASMCGLCE54AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
| MASMBJ30A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMBJ64AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 64V 103V DO214A... |
| MASMBJ8.5AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MASMBG120AE3 | Microsemi Co... | 4.31 $ | 1000 | TVS DIODE 120V 193V DO215... |
| MASMCJ22CAE3 | Microsemi Co... | 4.91 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
| MASMLG7.0AE3 | Microsemi Co... | 5.96 $ | 1000 | TVS DIODE 7V 12V DO215AB |
| MASMLG160CAE3 | Microsemi Co... | 6.39 $ | 1000 | TVS DIODE 160V 259V DO215... |
| MASMCGLCE15A | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
| MASMBJ8.0CA | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MASMBJ51CAE3 | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MASMBG170A | Microsemi Co... | 4.31 $ | 1000 | TVS DIODE 170V 275V DO215... |
| MASMCG78A | Microsemi Co... | 4.67 $ | 1000 | TVS DIODE 78V 126V DO215A... |
| MASMCJ17CAE3 | Microsemi Co... | 4.91 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
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MASMBJ54CA Datasheet/PDF