| Allicdata Part #: | 1086-5665-ND |
| Manufacturer Part#: |
MASMCG10AE3 |
| Price: | $ 4.67 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 10V 17V DO215AB |
| More Detail: | N/A |
| DataSheet: |  MASMCG10AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 152 +: | $ 4.24359 |
Specifications
| Voltage - Clamping (Max) @ Ipp: | 17V |
| Supplier Device Package: | SMCG (DO-215AB) |
| Package / Case: | DO-215AB, SMC Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 88.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 11.1V |
| Voltage - Reverse Standoff (Typ): | 10V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Description
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MASMCG10AE3 is a TVS diode from Diodes, Inc. The MASMCG10AE3 is a bidirectional, low-capacitance ESD protection diode. It has an IEC 61000-4-2 ESD air-gap displacement voltage of 8 kV and contact ESD of 16 kV. This provides electrostatic discharge (ESD) protection.The MASMCG10AE3 provides a high degree of protection against ESD events, with fast response times and low clamping voltages, making it suitable for use in a wide range of circuits.Ithas a low VBR of 8V, a peak pulse current of 1.5A, and a low capacitance of 0.3pF. This makes it ideal for protecting sensitive electronic circuits from ESD events, such as those found in consumer electronics, including cell phones and laptops, as well as in automotive, industrial, and medical equipment.The MASMCG10AE3 can be used in a variety of circuit configurations, including as a cable guard in USB applications, as a direct connection in high-speed data and signal lines, or as a signal line protector for EMI and ESD protection.The MASMCG10AE3 is designed to protect circuits from ESD transients that are both positive and negative. It is able to limit the voltage peak at the signal line to a safe level without intervening in the normal electronic signal. This protection of sensitive electronic circuits is accomplished by the use of external series resistors, which reduce the ESD current levels, and the internal Zener breakdown of the diode, which limits the voltage level.The MASMCG10AE3\'s ESD protection circuit is designed to be triggered quickly, typically within a few nanoseconds, in order to prevent ESD damage. The diode\'s VBR, or breakdown voltage, helps to ensure that the ESD transient is reduced to a safe level without disrupting the normal electronic operation of the circuit.In summary, the MASMCG10AE3, a bidirectional, low-capacitance ESD protection diode, is the ideal choice for protecting both sensitive and high-speed signal lines from ESD transients. Its low VBR and peak pulse current enable it to provide high levels of protection, while its fast response time ensures that it can protect circuits from ESD events quickly and reliably.
The specific data is subject to PDF, and the above content is for reference
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| MASMCJ17CAE3 | Microsemi Co... | 4.91 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
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