| Allicdata Part #: | 1086-5684-ND |
| Manufacturer Part#: |
MASMCG130A |
| Price: | $ 4.67 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 130V 209V DO215AB |
| More Detail: | N/A |
| DataSheet: | MASMCG130A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 152 +: | $ 4.24359 |
| Voltage - Clamping (Max) @ Ipp: | 209V |
| Supplier Device Package: | SMCG (DO-215AB) |
| Package / Case: | DO-215AB, SMC Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 7.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 144V |
| Voltage - Reverse Standoff (Typ): | 130V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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MASMCG130A is an electrostatic protection device developed by United Advanced Technologies Inc. It is a kind of TVS - Diodes, which is mainly used for Lightning and Electrical Transient Protection.
This electrostatic protection device is based on the principle of avalanche breakdown. It is composed of a P-type silicon substrate and an N+ implant layer. When a voltage is applied between the two layers, it will cause a very small amount of voltage drop, which makes the device effective in suppressing transient voltages. As the voltage increases, the current in the device will gradually increase, and once the current reaches a certain value, the avalanche breakdown phenomenon will occur.
Due to its excellent characteristics, MASMCG130A is widely used in various applications such as automotive systems, information and communication systems, consumer electronics, financial equipment, and industrial equipment, where it can effectively prevent voltage overshoot or ESD damage caused by lightning, electrostatic buildup, high voltage, or other transient conditions.
The working principle of MASMCG130A is simple and reliable. When a high voltage is applied, it will rapidly establish an avalanche breakdown of reverse current, thereby limiting the peak voltage across the device to a safe level.
In addition to the avalanche breakdown principle, MASMCG130A also has a special design with two transistors connected in series. The first transistor will turn on at a certain voltage, and the second one will turn on at a higher voltage, thus significantly enhancing its resistance to transient voltage.
MASMCG130A has a high voltage clamping capability and excellent surge protection. It can quickly and effectively clamp transient voltage up to 500 V and provide up to 55 V reverse standoff voltage. And, its typical peak pulse power dissipation is up to 1.8 kW, allowing it to absorb a large amount of peak surge power.
Moreover, MASMCG130A has a low capacitance and low leakage current, which helps to reduce EMI radiation and noise. It also has a low temperature coefficient, ensuring its reliability even in high-temperature environments. And, the device can operate in temperatures ranging from -55°C to +125°C.
In summary, MASMCG130A is a powerful electrostatic protection device. It has a reliable avalanche breakdown principle, high voltage clamping capability, excellent surge protection, low capacitance and low leakage current, and a wide temperature range, making it ideal for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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| MASMBG10CAE3 | Microsemi Co... | 4.0 $ | 1000 | TVS DIODE 10V 17V DO215AA |
| MASMBG85CAE3 | Microsemi Co... | 4.0 $ | 1000 | TVS DIODE 85V 137V DO215A... |
| MASMBJ36CA/TR | Microsemi Co... | 4.17 $ | 1000 | HI REL TVS |
| MASMCJ110AE3 | Microsemi Co... | 4.5 $ | 1000 | TVS DIODE 110V 177V DO214... |
| MASMCJ70AE3 | Microsemi Co... | 4.5 $ | 1000 | TVS DIODE 70V 113V DO214A... |
| MASMLJ100AE3 | Microsemi Co... | 5.78 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MASMLJ51CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MASMLJ8.0CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MASMLJ8.5CA | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MASMCJLCE24A | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
| MASMCJLCE30AE3 | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMCGLCE11A | Microsemi Co... | 6.47 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MASMCGLCE16AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MASMCGLCE54AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
| MASMBJ30A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMBJ64AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 64V 103V DO214A... |
| MASMBJ8.5AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MASMBG120AE3 | Microsemi Co... | 4.31 $ | 1000 | TVS DIODE 120V 193V DO215... |
| MASMCJ22CAE3 | Microsemi Co... | 4.91 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
| MASMLG7.0AE3 | Microsemi Co... | 5.96 $ | 1000 | TVS DIODE 7V 12V DO215AB |
| MASMLG160CAE3 | Microsemi Co... | 6.39 $ | 1000 | TVS DIODE 160V 259V DO215... |
| MASMCGLCE15A | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
| MASMBJ8.0CA | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MASMBJ51CAE3 | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MASMBG170A | Microsemi Co... | 4.31 $ | 1000 | TVS DIODE 170V 275V DO215... |
| MASMCG78A | Microsemi Co... | 4.67 $ | 1000 | TVS DIODE 78V 126V DO215A... |
| MASMCJ17CAE3 | Microsemi Co... | 4.91 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
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MASMCG130A Datasheet/PDF